Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl<sub>2</sub>/Ar Plasma

Lee, J. W.; Shul, R. J.; Vawter, G.A.; Abernathy, C. R.; Pearton, S. J.; Hahn, Yoon‐Bong

doi:10.1143/jjap.42.38

Cited by 3 publications

(2 citation statements)

References 43 publications

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“…Chlorine is introduced into the chamber through a gas ring surrounding the sample holder ( Fig. 3.5) and reacts with indium on the surface to form InCl x compounds [72,73]. InCl x have a relatively low vapor pressure at room temperature [74].…”

Section: Chlorine Based Chemically Assisted Ion Beam Etchingmentioning

confidence: 99%

Two Dimensional Photonic Crystals in InP-Based Materials

Mulot¹

2006

Meet. Abstr.

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Photonic crystals (PhCs) are structures periodic in the dielectric constant. They exhibit a photonic bandgap, i.e., a range of wavelengths for which light propagation is forbidden. Engineering of defects in the PhC lattice offers new ways to confine and guide light. PhCs have been manufactured using semiconductors and other material technologies. This thesis focuses on two-dimensional PhCs etched in InP-based materials. Only recently, such structures were identified as promising candidates for the realization of novel and advanced functions for optical communication applications.The primary focus was on fabrication and characterization of PhC structures in the InP/GaInAsP/InP material system. The demands on fabrication are very high: holes as small as 100-300 nm in diameter have to be etched at least as deep as 2 µm. Thus, different etch processes had to be explored and specifically developed for InP. We have implemented an etching process based on Ar/Cl 2 chemically assisted ion beam etching (CAIBE), that represents the state of the art PhC etching in InP.Different building blocks were manufactured using this process. A transmission loss of 10 dB/mm for a PhC waveguide, a reflection of 96.5% for a 4-row mirror and a record quality factor of 310 for a 1D cavity were achieved for this material system. With an etch depth of 4.5 µm, optical loss was found to be close to the intrinsic limit. PhC-based optical filters were demonstrated using (a) a Fabry-Pérot cavity inserted in a PhC waveguide and (b) a contra-directional coupler. Lag effect in CAIBE was utilized positively to realize high quality PhC taper sections. Using a PhC taper, a coupling efficiency of 70% was demonstrated from a standard ridge waveguide to a single line defect PhC waveguide.During the course of this work, InP membrane technology was developed and a Fabry-Pérot cavity with a quality factor of 3200 was demonstrated.Descriptors: photonic crystals, photonic bandgap materials, indium phosphide, dry etching, chemically assisted ion beam etching, reactive ion etching, electron beam lithography, photonic integrated circuits, optical waveguides, resonant cavities, optical filtering.

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Section: Chlorine Based Chemically Assisted Ion Beam Etchingmentioning

confidence: 99%

Two Dimensional Photonic Crystals in InP-Based Materials

Mulot¹

2006

Meet. Abstr.

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“…[1][2][3] These techniques include reactive ion etching ͑RIE͒, electron cyclotron resonance RIE, inductively coupled plasma RIE, and chemically assisted ion beam etching ͑CAIBE͒, with chlorine-containing gases most commonly used. A number of dry etching techniques and plasma chemistries have been reported for etching a wide range of III-V semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Development of chemically assisted etching method for GaAs-based optoelectronic devices

Gaillard¹,

Rhallabi

Elmonser

et al. 2005

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl 2 / Ar / BCl 3 inductively coupled plasmas J.Chemically assisted ion beam etching of GaAs-based materials using Cl 2 reactive gas was has been experimentally and theoretically examined. The primary effort was the design of an etching system for high reproducibility and improved throughput. Characteristics of the etching process, i.e., etch rate, etch profiles, and surface morphology as a function of etching parameters, i.e., substrate temperature, Cl 2 flow rate, ion current density, and energy are reported. In addition, we have analyzed the etched surfaces qualitatively by Auger electron spectroscopy, and quantitatively by atomic force microscopy. The developed process yielded stoichiometric and smooth GaAs surfaces. Moreover, in order to understand the mechanism of the Cl 2 etching reaction with GaAs, a simulation of the etch profile evolution with time as function of etching parameters was carried out. Simulations were compared with experimentally derived data and were found to be in good agreement. Finally, the developed process was successfully applied to the fabrication of ridge waveguides GaAs/GaAlAs lasers with cw optical characteristics similar to wet chemical etched lasers.

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ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

Huang

Chen

et al. 2018

Infrared Physics & Technology

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Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl₂/Ar Plasma

Cited by 3 publications

References 43 publications

Two Dimensional Photonic Crystals in InP-Based Materials

Two Dimensional Photonic Crystals in InP-Based Materials

Development of chemically assisted etching method for GaAs-based optoelectronic devices

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

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Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl2/Ar Plasma

Cited by 3 publications

References 43 publications

Two Dimensional Photonic Crystals in InP-Based Materials

Two Dimensional Photonic Crystals in InP-Based Materials

Development of chemically assisted etching method for GaAs-based optoelectronic devices

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

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Product

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Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl₂/Ar Plasma