Reactive ion etching of 193-nm resist candidates: current platforms and future requirements

Wallow, Thomas I.; Brock, Phillip J.; Pietro, Richard A. Di; Allen, Robert D.; Opitz, Juliann; Sooriyakumaran, Ratnam; Hofer, Donald C.; Meute, Jeff; Byers, Jeff M.; Rich, Georgia K.; McCallum, Martin; Schuetze, S.; Jayaraman, Saikumar; Hullihen, Karen A.; Vicari, Richard; Rhodes, Larry F.; Goodall, Brian; Shick, Robert A.

doi:10.1117/12.312362

Cited by 15 publications

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“…The primary design challenge that has emerged in the development of new materials for 193 nm photolithography is the compromise between imaging performance (broadly defined as resolution, adhesion, sensitivity, and compatibility with industry standard aqueous-base developers) and reactive-ion etch resistance . For the initial acrylic materials, the chemical modifications that were used to tailor imaging performance also deleteriously influenced reactive-ion etch resistance . Previously, it was determined that there is a correlation between increased reactive-ion etch resistance and a high carbon to hydrogen (C/H) ratio. , This observation supports the fact that phenolic resist materials, which have a high C/H ratio, exhibit good plasma etch resistance.…”

Section: Introductionmentioning

confidence: 88%

“…13 However, a major disadvantage of acrylic materials was poor reactive-ion etch resistance under the etching conditions used widely in the semiconductor industry. 14 The primary design challenge that has emerged in the development of new materials for 193 nm photolithography is the compromise between imaging performance (broadly defined as resolution, adhesion, sensitivity, and compatibility with industry standard aqueous-base developers) and reactive-ion etch resistance. 10 For the initial acrylic materials, the chemical modifications that were used to tailor imaging performance also deleteriously influenced reactive-ion etch resistance.…”

Section: Introductionmentioning

confidence: 99%

“…10 For the initial acrylic materials, the chemical modifications that were used to tailor imaging performance also deleteriously influenced reactive-ion etch resistance. 14 Previously, it was determined that there is a correlation between increased reactive-ion etch resistance and a high carbon to hydrogen (C/H) ratio. 2,15 This observation supports the fact that phenolic resist materials, which have a high C/H ratio, exhibit good plasma etch resistance.…”

Section: Introductionmentioning

confidence: 99%

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Fundamental Investigations of the Free Radical Copolymerization and Terpolymerization of Maleic Anhydride, Norbornene, and Norbornene tert-Butyl Ester: In-Situ Mid-Infrared Spectroscopic Analysis

Pasquale

Allen²,

Long

2001

Macromolecules

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Various synthetic factors that affect the molecular weight, yield, and composition of maleic anhydride (MAH), norbornene (Nb), and tert-butyl 5-norbornene-2-carboxylate (Nb-TBE) terpolymers were investigated. Real-time monitoring via in-situ FTIR spectroscopy of co- and terpolymerizations of MAH with Nb and Nb-TBE was utilized to evaluate the observed rates of varying Nb/Nb-TBE monomer feed ratios. Pseudo-first-order kinetic analysis indicated that the observed rate of reaction (k obs) was a strong function of the Nb/Nb-TBE ratio with a maximum of 6.68 × 10-5 s-1 for a 50/0/50 Nb/Nb-TBE/MAH monomer ratio and a minimum of 1.13 × 10-5 s-1 for a 0/50/50 Nb/Nb-TBE/MAH ratio. In addition, polymer yields were also observed to be a function of the Nb/Nb-TBE ratio and also decreased with increasing Nb-TBE. Sampling of an Nb/Nb-TBE/MAH (25/25/50 mole ratio) terpolymerization and subsequent analysis using 1H NMR indicated that the relative rate of Nb incorporation is approximately 1.7 times faster than Nb-TBE incorporation. Also, the observed rate constant of 4.42 × 10-5 s-1 calculated using 1H NMR agreed favorably with the k obs determined via in-situ FTIR (3.83 × 10-5 s-1). Terpolymerizations in excess Nb-TBE and in the absence of solvent resulted in relatively high molecular weight materials (M n > 20 000) and provided a potential avenue for control of the Nb/Nb-TBE incorporation into the resulting materials.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fundamental Investigations of the Free Radical Copolymerization and Terpolymerization of Maleic Anhydride, Norbornene, and Norbornene tert-Butyl Ester: In-Situ Mid-Infrared Spectroscopic Analysis

Pasquale

Allen²,

Long

2001

Macromolecules

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“…Many previous studies had focused on the Ohnishi parameter or other materials properties thought to influence how a formulation responds to an etch process. 19,20 Figure 4(a) shows two graphs, the first is post-develop biased LWR (generated at an external fab) versus unbiased PSD(0) measurements generated with DuPont images. Figure 4(b) shows post-etch-trim biased LWR (generated externally) against the same unbiased PSD(0) measurements generated at DuPont.…”

Section: Understanding Trends In Lwr Through Process Based On Formulation and Psdmentioning

confidence: 99%

Pattern roughness analysis using power spectral density: application and impact in photoresist formulation

Cutler¹,

Thackeray

Trefonas

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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Linewidth roughness (LWR) remains a difficult challenge for improvement in resist materials. We intend to review work that focused on the impact of key components of LWR by analyzing the unbiased power spectral density (PSD) curves. We studied systematic changes to ArF resist formulations and correlated these changes to the overall PSD curves. In this manner, we could extract LWR 3σ values and resist correlation length and the low/high-frequency roughness components. We also investigated the relationship between PSD and LWR through lithographic/ etch processing and demonstrated which PSD components correspond to the largest impact on LWR. This work was extended further to investigate how frequency components are influenced by basic resist properties such as diffusion and aerial image properties such as normalized image logslope (NILS). Particular attention was given to how changes in correlation length affected LWR as feature size decreases. We also looked at the impact of diffusion or resist blur on PSD(0) as a function of NILS. Finally, we will review how LWR improvement can be achieved by several strategies that focus on both PSD(0) and correlation length (ξ) and not a single LWR number. The trends presented highlight the true nature of LWR with respect to its high and low-frequency components. It also shows the benefits of measuring and developing resists as a function of roughness power spectral density and not as a function of a single LWR measurement. © The Authors.Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…In addition, they promised to be highly transparent at 193 nm due to the lack of unsaturation. Much was published regarding the suitability of one type of alicyclic resin for 193 nm application, vinyl addition poly(norbornene), beginning in the late 1990s . For example, unfunctionalized poly(norbornene) exhibited a lower etch rate than novolac under very aggressive chlorine etch conditions while appropriately functionalized poly(norbornene) formulations could print sub‐100 nm contact holes .…”

Section: Introductionmentioning

confidence: 99%

Polymers of norbornenyl‐4‐phenol: Dissolution rate characteristics, positive tone photo‐patterning, and polymer properties

Evans

Brick

Bell

et al. 2017

J of Applied Polymer Sci

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Vinyl addition norbornene polymers with phenol pendent groups are obtained by methanolysis of the 4-acetoxyphenyl norbornene polymer. Thin films of this polymer blended with additives such as norbornene polymers with hexafluoroalcohol pendent groups and diazonaphthoquinone compounds result in linear dissolution in tetramethylammonium hydroxide developer. Good resolution, positive tone patterns are obtained from image-wise exposure of thin films of blends of the diazonaphthoquinone additives with both phenol pendent norbornene homopolymer and with norbornene copolymers with both phenol and hexafluoroalcohol pendent groups. Properties such as transparency, dielectric constant, chemical, and thermal resistance were determined for cured copolymer compositions containing an epoxy crosslinker.

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Reactive ion etching of 193-nm resist candidates: current platforms and future requirements

Cited by 15 publications

References 0 publications

Fundamental Investigations of the Free Radical Copolymerization and Terpolymerization of Maleic Anhydride, Norbornene, and Norbornene tert-Butyl Ester: In-Situ Mid-Infrared Spectroscopic Analysis

Fundamental Investigations of the Free Radical Copolymerization and Terpolymerization of Maleic Anhydride, Norbornene, and Norbornene tert-Butyl Ester: In-Situ Mid-Infrared Spectroscopic Analysis

Pattern roughness analysis using power spectral density: application and impact in photoresist formulation

Polymers of norbornenyl‐4‐phenol: Dissolution rate characteristics, positive tone photo‐patterning, and polymer properties

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