Reactive Ion Etching of Diamond in O₂ and CF₄ Plasma, and Fabrication of Porous Diamond for Field Emitter Cathodes

Abstract

Identifying the location of deposits of gamma emitting materials within storage vessels is of interest in the nuclear industry. A model example is presented involving an idealized cone-shaped deposit of gamma emitting material contained within a vessel. The purpose of this study is to determine whether useful information regarding the gamma emitting deposit can be obtained from a dataset of very limited size and quality. The inverse problem of determining the size and location of the deposit from a very limited number of measurements taken outside the tank is not a straightforward matter. Failure of a Gauss-Newton implementation of the regularized least squares method has led the authors to consider a Markov chain Monte Carlo approach, which gives improved robustness and a credibility region for the estimates that quantifies the reliability of the tomographic reconstruction.

Improvement of Crystal Quality of a Homoepitaxially Grown Diamond Layer Using Plasma Etching Treatment for a Diamond Substrate

“…0.5 m. It was fabricated using an evaporation method. The etching rate of aluminum is six times lower than that of diamond 12) . After etching, the aluminum mask was removed by polishing using Al 2 O 3 abrasive soap.…”

“…Therefore, practical diamond electric devices including sensor application are desired in fields of nuclear engineering, radiology, and space engineering. In addition, diamond is applicable to a 14 MeV neutron energy spectrometer for ion temperature measurements using 12 C(n, ) 9 Be reaction [4][5] . The final goal of our research is realization of a practical synthetic diamond radiation detector to achieve that purpose.…”

Diamond Nanowires: Fabrication, Structure, Properties and Applications

“…The DNWs precursor of porous diamond films was successfully fabricated by reactive ion etching in O 2 and CF 4 plasma [12], thereafter, nanostructured diamond honeycomb films were prepared by oxygen plasma etching with porous anodic alumina mask [13]. Very recently, DNWs of 80-100 nm in length were synthesized in ultra-nanocrystalline diamond (UNCD) films which was deposited by microwave plasma enhanced chemicalvapor deposition (MPECVD) system with an introduction of nitrogen in the mixture gas [14,15].…”

Diamant‐Nanodrähte: Herstellung, Struktur, Eigenschaften und Anwendungen

“…Theoretische Berechnungen der Eigenschaften von Diamant-Nanodrähten und Nanostäben [24][25][26][27] weisen auf faszinierende Eigenschaften von Diamant-Nanodrähten hin, erklären sie zu einem interessanten und zugänglichen Syntheseziel und ermutigten auch uns bei der Suche nach Verfahren zu ihrer Herstellung. In zahlreichen Forschungsarbeiten wurden Syntheseverfahren für DiamantNanodrähte entwickelt, einschließlich reaktives Ionenätzen ("reactive ion etching", RIE), [28][29][30][31][32][33][34][35] Plasma-Nachbehandlung von Kohlenstoff-Nanorçhren, [36,37] Umwandlung von Fulleren in Diamant-Nanorçhren bei hoher Temperatur und hohem Druck [38] und Templat-oder Katalysator-unterstützte CVDVerfahren ("chemical vapor deposition", chemische Gasphasenabscheidung). [39,40] Die Synthese von Diamant-Nanodrähten erwies sich aber als Vorgang mit niedriger Wahrscheinlichkeit, der sehr schwer zu reproduzieren ist, obwohl wir und andere viele Versuche dazu unternahmen und trotz vieler interessanter Anwendungsmçglichkeiten, z.…”