1989
DOI: 10.1063/1.101890
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Reactive ion etching of diamond

Abstract: A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II-A diamonds using 300 eV oxygen ions. Addition of a substantial percentage of Ar to oxygen in the reaction chamber did not affect the etching rate.

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Cited by 99 publications
(28 citation statements)
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“…4 However, those as-formed diamond cones were not sharp enough and showed poor electrical conducting properties, which is disadvantageous for use as individual electron point sources. Zhang et al reported the FEE properties of diamond cone arrays formed by bias-assisted reactive etching process.…”
Section: Z Cuimentioning
confidence: 99%
“…4 However, those as-formed diamond cones were not sharp enough and showed poor electrical conducting properties, which is disadvantageous for use as individual electron point sources. Zhang et al reported the FEE properties of diamond cone arrays formed by bias-assisted reactive etching process.…”
Section: Z Cuimentioning
confidence: 99%
“…Generally, the reactive ion etching of the substrates using patterned masks is one of the most promising techniques for the fabrication of nanocones. However, it can only be applied successfully to certain limited substrates [3][4].In this work, we report a significant subtractive formation process of large-area diamond conical nanostructure arrays on freestanding diamond films using a hot filament chemical vapor deposition (HFCVD) system with negative biasing of the substrates. The etching gas comprising of H2 and CH4 with typical flow rate ratios of 100 : (1.5-4) sccm was employed to generate the plasma at a chamber pressure of about 20-30 Torr.…”
mentioning
confidence: 98%
“…Generally, the reactive ion etching of the substrates using patterned masks is one of the most promising techniques for the fabrication of nanocones. However, it can only be applied successfully to certain limited substrates [3][4].…”
mentioning
confidence: 99%
“…The first studies on the etching of diamond were performed on high pressure-high temperature (HP/HT) single-crystal samples using an O 2 /H 2 RF plasma. 84 Starting in 1990, several studies have addressed the use of a suitable gas or of gas mixtures to realize plasma treatments of single-crystal or polycrystalline diamond flat plates, 34,85 obtaining nanowire arrays with or without applying a mask. These findings have opened the way for the design and fabrication of pointed diamond nanostructures also for emitting purposes.…”
Section: D Structuresmentioning
confidence: 99%