Reactive ion etching of PbZr1−x TixO3 and RuO2 films by environmentally safe gases

Pan, Wei; Desu, Seshu B.; Yoo, In-Kyeong; Vijay, Dilip P.

doi:10.1557/jmr.1994.2976

Cited by 33 publications

(8 citation statements)

References 10 publications

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“…It is very difficult to find a trade-off between a reasonable PZT etch rate, photoresist dimensional stability and removability. Other studies gives similar results in term of etching rates (10 to 40 nm/min) in HC 2 CIF 4 [32], in C 2 F 6 /Cl 2 [33] or in CF 4 /Cl 2 [34] gases recently, Chung et al [35] reported the etching process of PZT using ICP reactor and HBr/Ar gas mixture. An etch rate of 90 nm/min and a steep etch profile of 70 • has been achieved.…”

Section: Dry Etching Of Pzt Thin Filmssupporting

confidence: 54%

Microfabrication of Piezoelectric MEMS

Baborowski

2004

Integrated Ferroelectrics

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In this chapter an overview of processes for fabrication of MEMS using piezoelectric thin films as active layer in planar structures is presented. These structures are used in cantilever-like and membrane configurations for sensing and actuation. Key issues consist in findings of a compatible dry etching sequence for piezoelectric layer, electrodes and silicon. The method of compensation of the gradient of mechanical stresses in the thin films in order to obtain flat multilayer structures is demonstrated. Membrane thickness definition and liberation are obtained by DRIE of silicon on insulator (SOI) substrates or by surface micromachining. The platinum bottom electrode turned out to be a useful mask for deep silicon etching of narrow grooves. The complete process has successfully been used to fabricate flat cantilevers, ultrasonic transducers and pressure sensors. Excellent permittivity and transverse piezoelectric coefficient of PZT and AlN have been obtained with complete devices. Several examples of piezoelectric devices (ultrasonic transducers, acoustic sensor, damping control, RF switches) presented in this paper have been developed during the last years. It has been demonstrated that the microfabrication of piezoelectric MEMS based on PZT or AlN thin films is the versatile and reliable technology. Most of the developments are based on PZT sol-gel textured films, however some efforts have been done for integration of AlN for piezoelectric MEMS. In this context, the advantage of AlN is the low thermal budget processing and the possibility of post-CMOS above-IC integration. Other examples of application like ferroelectric memories, nanopatterning and local growth of PZT are presented as well.326 Electroceramic-Based MEMS: Fabrication-Technology and Applications

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Section: Dry Etching Of Pzt Thin Filmssupporting

confidence: 54%

Microfabrication of Piezoelectric MEMS

Baborowski

2004

Integrated Ferroelectrics

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“…CHClFCF 3 ͑DuPont trade name HCFC-124͒ was selected for this particular study, because it has been proven effective for complex metal oxides etching and is known to be less environmentally hazardous compared to the other hydrofluorocarbons. 14 In this letter, the preliminary experimental results on reactive etching of SrBi 2 Ta 2 O 9 and SrBi 2 Nb 2 O 9 are presented. The dependence of etch rates on chamber pressure and rf power are presented.…”

Section: ͓S0003-6951͑96͒01504-8͔mentioning

confidence: 99%

Reactive ion etching of ferroelectric SrBi2TaxNb2−xO9 thin films

Desu

Pan

1996

Applied Physics Letters

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Ferroelectric SrBi2TaxNb2−xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHClFCF3, a special etching gas, known to be less environmentally hazardous compared to the other hydrofluorocarbons, was employed in this study. The etch rates as a function of etching parameters were investigated. An etch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x-ray photoelectron spectroscopy. Surface residues were removed by a postetching cleaning process.

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“…Patterning of PZT films has become an essential element of device fabrication. Several techniques have been developed for etching: wet chemical etching, 1 ion-beam etching ͑IBE͒, 2 reactive ion etching ͑RIE͒, [3][4][5] electron cyclotron resonance ͑ECR͒ etching, 6 and inductively coupled plasma ͑ICP͒ etching. 7 The RIE is widely used because it provides, in some etching conditions, high etch rate and selectivity, and also a high degree of anisotropy.…”

Section: Introductionmentioning

confidence: 99%

Electrical damage induced by reactive ion-beam etching of lead-zirconate-titanate thin films

Soyer

Cattan

Rémiens

2005

Journal of Applied Physics

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Ion-beam etching of sputtered Pb͑Zr x ,Ti 1−x ͒O 3 ͑PZT͒ thin films with x equal to 0.54 grown on Pt/ TiO x / SiO 2 / Si substrates has been performed using pure Ar gas and a varying CHF 3 / Ar gas mixing ratio. The etch rate dependence on the process parameters ͑gas composition, current density, and acceleration voltage͒ has been investigated. PZT etch rate under 40% CHF 3 in Ar can reach 100 nm/ min with an acceleration voltage of 900 V and a current density of 0.7 mA/ cm 2 ͑in comparison to 35 nm/ min in pure Ar͒. A selectivity ratio of 8 has been obtained between PZT and photoresist ͑1.3 in pure Ar͒. We have evaluated the PZT surface damage by contact mode atomic force microscopy. It appears that the roughness increases less under a gas mixture than under a pure argon beam, and that the preferential etching observed at the grain boundaries under a pure argon beam disappears when we increase the proportion of CHF 3 in the gas mixture. For some etching parameters ͑current density, acceleration voltage, and gas mixing ratio͒, we have observed electrical damage. C͑V͒ and hysteresis loops P͑E͒ measurements before and after etching have demonstrated these degradations. We have noted a large decrease of the permittivity after the etching process, independently of the current density and the acceleration voltage. The ferroelectric damage was illustrated by a large increase of the average coercive field after etching in pure argon. The presence of CHF 3 in the plasma partially reduces the damage.

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Reactive ion etching of PbZr_1−x Ti_xO₃ and RuO₂ films by environmentally safe gases

Cited by 33 publications

References 10 publications

Microfabrication of Piezoelectric MEMS

Microfabrication of Piezoelectric MEMS

Reactive ion etching of ferroelectric SrBi2TaxNb2−xO9 thin films

Electrical damage induced by reactive ion-beam etching of lead-zirconate-titanate thin films

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