Reactive ion etching of Si1−xGex alloy with hydrogen bromide

Guo, Lin; Li, Kaicheng; Liu, Daoguang; Ou, Yongsheng; Zhang, Jing; Yi, Qiang; Xu, Sai

doi:10.1016/s0022-0248(01)00864-8

Cited by 6 publications

(4 citation statements)

References 8 publications

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“…It is not an easy to realize selective etching of one material to other and control the profile of the etched features at the same time. Several authors have studied the reactive ion etching of SiGe alloys and high selectivity that has been associated with isotropic etching [17], [22]. In this study, the lateral etch and the selectivity of Ge and Si 0.8 Ge 0.2 was evaluated, and its method is shown in Fig.…”

Section: B Etching Optimization Of Ge and Simentioning

confidence: 99%

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si_0.8Ge_0.2 by Controlling CF₄ Atmosphere With Ar and O₂ Additives in ICP

Kumar

Lee

Wang

2021

IEEE Trans. Semicond. Manufact.

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An isotropic etching, etch rate and surface roughness of Si, Ge and Si 0.8 Ge 0.2 subjected to CF 4 /Ar/O 2 plasma has been studied using inductively coupled plasma (ICP) system. First, we applied the etching parameters on the silicon substrate to observe the etching rate using carbon tetrafluoride (CF 4 ) under different flow rates and choose the parameters of high etch rate. The chosen parameters for silicon was CF 4 (60 sccm) and etching in different ratios of argon (Ar) and oxygen (O 2 ) were also discussed. Second, it also reports on selective isotropic etching for germanium (Ge) and Si 0.8 Ge 0.2 by ultrahigh vacuum chemical vapor deposition (UHVCVD) and was etched under selected conditions used for silicon under different atmospheres in an inductively coupled plasma system. Starting from a pure CF 4 gas that etches Ge and Si 0.8 Ge 0.2 with a good selectivity to silicon, the modification of gas mixture was also investigated. A possible mechanism based on the favored action of CF 4 is investigated. Relative etch rate between Si, Ge and Si 0.8 Ge 0.2 are explained with etch rate reductions achieved by selective CF 4 plasma chemistries with Ar/O 2. Etched profile, surface roughness was examined and measured by using SEM and AFM technique.

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Section: B Etching Optimization Of Ge and Simentioning

confidence: 99%

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si_0.8Ge_0.2 by Controlling CF₄ Atmosphere With Ar and O₂ Additives in ICP

Kumar

Lee

Wang

2021

IEEE Trans. Semicond. Manufact.

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“…It is not easy to realize selective etching of one material to the other and control the profile of the etched features at the same time. Several authors have studied the ion etching mechanism of SiGe alloys [10][11][12] and high selectivity has ever been associated to isotropic etching. As it will be presented in this work, high selective etching of Ge to Si can be achieved un-der low ion bombardment conditions, but it is always associated to isotropic etching profiles.…”

Section: Introductionmentioning

confidence: 99%

Selective and Anisotropic Dry Etching of Ge over Si

Castro¹,

Barnola²,

Glück³

2020

JICS

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Inductively coupled plasma (ICP) etching of Ge with high selectivity over Si and anisotropic etched profiles using CF4, HBr, SF6, and Cl2 reactive gases has been studied. Because pressure and biased power should be the most important parameters to drive selectivity and etch profile, they were varied from 4 to 50 mTorr and from 0 to 50 W, respectively, so as to investigate their influence on process. Total gas flow (100 sccm) and source power (350 W) were initially held constant. Selectivity greater than 100:1 of Ge over Si was achieved using 100 % Cl2 etch gas at 50 mTorr and zero bias power but the profile of the etched features was isotropic. With the addition of N2 to the feed gas (Cl2) the profile became more anisotropic. A three steps ICP etch process was developed with a final Ge/Si etch selectivity of 5:1 and anisotropic profiles.

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“…SiGe heterostructures are increasingly used in advanced CMOS, 1 bipolar junction transistors, 2 and have gained recent interest as optoelectronic devices. 3 For such devices, dry etching techniques enable selective removal of Si, Ge, or SiGe alloy layers through masking techniques, which give superior dimensional control and process flexibility, relative to wet etching processes.…”

Section: Introductionmentioning

confidence: 99%

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

Wongwanitwattana¹,

Shah²,

Myronov³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The impact of the O 2 content in SF 6 -O 2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O 2 content. Below 50% of O 2 content, a large variation in Ge etch rates is found compared to that of Si, but for O 2 content above 50% the etch rates follow relatively the same trend. Lightly doped Ge shows the highest etch rate at a O 2 concentration up to 20%. Sidewall angles range from a minimum of 80 to a maximum of 166 , with O 2 concentration of 20% yielding perfect anisotropic mesa etch. Also at this O 2 concentration, reasonable Si/Ge selectivity is possible. These observations indicate that by adjusting the O 2 concentration, precision plasma etching of Si, Ge, and Ge:P is possible.

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Reactive ion etching of Si1−xGex alloy with hydrogen bromide

Cited by 6 publications

References 8 publications

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si_0.8Ge_0.2 by Controlling CF₄ Atmosphere With Ar and O₂ Additives in ICP

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si_0.8Ge_0.2 by Controlling CF₄ Atmosphere With Ar and O₂ Additives in ICP

Selective and Anisotropic Dry Etching of Ge over Si

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

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Reactive ion etching of Si1−xGex alloy with hydrogen bromide

Cited by 6 publications

References 8 publications

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP

Selective and Anisotropic Dry Etching of Ge over Si

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

Contact Info

Product

Resources

About

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si_0.8Ge_0.2 by Controlling CF₄ Atmosphere With Ar and O₂ Additives in ICP

Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si_0.8Ge_0.2 by Controlling CF₄ Atmosphere With Ar and O₂ Additives in ICP