Reactive nitrogen source based on ECR discharge sustained by 24 GHz radiation

Abstract

One of the key problems in the synthesis of group III nitrides is the development of an effective source of reactive nitrogen, which is necessary for incorporation into the crystal lattice. In this paper, we describe a source of reactive nitrogen based on ECR discharge plasma, which is sustained by technological gyrotron radiation. Measurements of atomic nitrogen flux were conducted by mass-spectrometric analysis of the products of the reaction of nitrogen monoxide with atomic nitrogen. The maximal atomic nitrogen flow was 5 ' 10 18 atoms/s (12 sccm). The atomic source was used to grow InN films.