Reactive pulsed laser deposition of gold nitride thin films

Caricato, Anna Paola; Fernández, M.; Leggieri, G.; Luches, A.; Martino, M.; Romano, Francesco; Tunno, T.; Valerini, D.; Verdyan, A.; Soifer, Ya. M.; Azoulay, J.; Meda, Lamartine

doi:10.1016/j.apsusc.2007.02.081

Cited by 16 publications

(15 citation statements)

References 5 publications

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“…The partial pressure of N 2 was varied between 0.1 and 100 Pa and it was found, by AFM, that films prepared under low N 2 ambient pressures have a much higher root mean square (r.m.s.) roughness compared with those produced at high N 2 ambient pressures (35.1 nm at 0.1 Pa and 3.6 nm for films deposited at 50 Pa) [7]. Formation of a nitride phase was confirmed by energy dispersive spectroscopy (EDS), Rutherford backscattering spectrometry (RBS) and XPS [6].…”

Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 85%

“…In particular, the EDS measurements after post annealing the gold nitride films indicate that quite a large quantity of nitrogen is present in the films and that the nitrogen is not purely physisorbed, since the nitrogen signal does not decrease after prolonged annealing at 250°C, confirming chemical bonding between nitrogen and gold. RBS and EDS measurements show a relatively high nitrogen concentration in the gold nitride films produced with this method (*5%) [7].…”

Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 88%

“…There are a number of different techniques by which gold nitride films can be produced such as ion implantation [8,9], reactive ion sputtering (RIS) [6,10,11], plasma etching [6,[12][13][14], reactive pulsed laser deposition [7] and plasma assisted physical vapor deposition (PAPVD) using pulsed arc discharge [15,16]. Moreover, gold nitride species have been found to exist in the gas phase: Drenck et al [17] observed the formation of nitrogen-gold AuN n -anions and dianions.…”

Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 99%

“…Very recently, gold nitride films have been deposited on a silicon substrate without any buffer layer at room temperature using this method [7]. The Au target was ablated by KrF excimer laser pulses of 30 ns duration and with a repetition rate of 10 Hz with laser fluence 6 J/cm 2 , in a nitrogen atmosphere.…”

Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 99%

“…For example, we have shown that incorporation of nitrogen into thin gold films can improve film hardness while still preserving electrical conductivity [6,7]. Pure gold films exhibit low hardness, typically *2 GPa, which can be increased by *50% in nitrogen containing films made by reactive ion sputtering (RIS) [6].…”

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Gold Nitride: Preparation and Properties

et al. 2009

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We review the currently known methods of producing gold nitride and report on the influence of electrically isolated substrates on the growth of gold nitride films by reactive ion sputtering (RIS). It is found that isolation of the substrate decreases grain size and increases nitrogen content, the latter attributed to longer nitrogen ion lifetime on the surface of the growing film. The chemical reactivity of gold nitride is compared with that of pure gold films using the adsorption of 1-dodecyl mercaptan (CH 3 (CH 2 ) 11 SH) as a model system and it is found that there is no significant difference between gold films and gold nitride in terms of Au-S binding. However, gold nitride nanoparticles are suggested to be worthy of further investigation in terms of their catalytic properties.

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Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 85%

Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 88%

Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 99%

Section: Review Of Current Methods For Production and Characterisatiomentioning

confidence: 99%

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confidence: 99%

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Gold Nitride: Preparation and Properties

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AuN films - structure and chemical binding

Quintero

Arango

Ospina

et al. 2015

Surf. Interface Anal.

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AuN films were produced on 304 stainless steel using an arc‐pulsed – assisted plasma physical vapor deposition system. The deposition was performed using an Au target in a nitrogen atmosphere at different pressures. The films were characterized using x‐ray photoelectron spectroscopy and x‐ray diffraction. A 398.1‐eV binding energy was observed and assigned to gold nitride species. The x‐ray diffraction patterns displayed a crystallographic structure that corresponded to the Au‐fcc phase with broad diffraction lines. The observed widening of the Bragg diffraction lines (rocking curves) can be attributed to the presence of interstitial nitrogen atoms in the Au‐fcc structure. Copyright © 2015 John Wiley & Sons, Ltd.

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