Reactive pulsed laser deposition of thin molybdenum- and tungsten-nitride films

Bereznai, Miklós; Tóth, Z.; Caricato, Anna Paola; Fernández, M.; Luches, A.; Majni, G.; Mengucci, P.; Nagy, Péter; Juhász, András; Nánai, L.

doi:10.1016/j.tsf.2004.06.149

Cited by 44 publications

(24 citation statements)

References 20 publications

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“…Due to the larger atomic sizes of tungsten as compared to nitrogen, tungsten possibly accommodates nitrogen with small distortion in the lattice (a = 2.91Å before the laser treatment and a = 2.893Å after the laser treatment). This situation is also observed in the previous study [7]. However, once the accumulation of nitrogen increases, lattice distortion results in amorphous compound in the surface region.…”

Section: Resultssupporting

confidence: 87%

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Laser treatment of cemented carbide cutting tool

Karataş¹,

Yilbaş²,

Aleem³

et al. 2007

Journal of Materials Processing Technology

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Section: Resultssupporting

confidence: 87%

“…Laser deposition of thin molybdenum and tungsten nitride films was studied by Berezndi et al [7]. They indicated that increased nitrogen content in the films lead to a monotonous increase of electrical resistance.…”

Section: Introductionmentioning

confidence: 99%

Laser treatment of cemented carbide cutting tool

Karataş¹,

Yilbaş²,

Aleem³

et al. 2007

Journal of Materials Processing Technology

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“…17,18 Later, tungsten nitride was prepared by adopting a replacement reaction where oxides or sulphides were heated in presence of HN 3 at a high temperature 600 to 900 o C. 10,18 Thin films of tungsten nitride were successfully deposited, however limited, by chemical and physical vapor deposition methods. [19][20][21][22] Klaus et. al.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode

Nandi

Sen

Sinha

et al. 2015

Phys. Chem. Chem. Phys.

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This article demonstrates the atomic layer deposition (ALD) of tungsten nitride using tungsten hexacarbonyl [W(CO)6] and ammonia [NH3] and its use as a lithium-ion battery anode. In situ quartz crystal microbalance (QCM), ellipsometry and X-ray reflectivity (XRR) measurements are carried out to confirm the self-limiting behaviour of the deposition. A saturated growth rate of ca. 0.35 Å per ALD cycle is found within a narrow temperature window of 180-195 °C. In situ Fourier transform infrared (FTIR) vibrational spectroscopy is used to determine the reaction pathways of the surface bound species after each ALD half cycle. The elemental presence and chemical composition is determined by XPS. The as-deposited material is found to be amorphous and crystallized to h-W2N upon annealing at an elevated temperature under an ammonia atmosphere. The as-deposited materials are found to be n-type, conducting with an average carrier concentration of ca. 10(20) at room temperature. Electrochemical studies of the as-deposited films open up the possibility of this material to be used as an anode material in Li-ion batteries. The incorporation of MWCNTs as a scaffold layer further enhances the electrochemical storage capacity of the ALD grown tungsten nitride (WNx). Ex situ XRD analysis confirms the conversion based reaction mechanism of the as-grown material with Li under operation.

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“…These properties of tungsten nitride films make it a promising and suitable material for hard-protective coatings on cutting tools (12), diffusion barriers in microelectronics devices (13). Various techniques have been employed for the synthesis of tungsten nitride films such as pulsed laser depositions (14), reactive magnetron sputtering (12,15), atomic layer *Corresponding author. Email: ahussnainsyed@gmail.com deposition (16), physical vapor deposition (17,18), and plasma enhanced chemical vapor deposition (18).…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus

Hussnain

Rawat

Ahmad

et al. 2015

Radiation Effects and Defects in Solids

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Nano-structure thin film of tungsten nitride was deposited onto Si-substrate at room temperature using Mather-type plasma focus (3.3 kJ) machine. Substrate was exposed against 10, 20, 30, and 40 deposition shots and its corresponding effect on structure, morphology, conductivity and nano-hardness has been systematically studied. The X-ray diffractormeter spectra of the exposed samples show the presence of various phases of WN and WN 2 that depends on number of deposition shots. Surface morphological study revealed the uniform distribution of nano-sized grains on deposited film surface. Hardness and conductivity of exposed substrate improved with higher deposition shots. X-ray photo-electron spectroscopy survey scan of 40 deposition shots confirmed the elemental presence of W and N on Si-substrate.

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Reactive pulsed laser deposition of thin molybdenum- and tungsten-nitride films

Cited by 44 publications

References 20 publications

Laser treatment of cemented carbide cutting tool

Laser treatment of cemented carbide cutting tool

Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode

Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus

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