Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates

Abstract

Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.

Investigating electrical properties and crystal growth in NiO thin films by spray pyrolysis and electrostatic spray deposition

“…Dry processes, such as sputtering 5,[18][19][20][21][25][26][27][28] or pulsed laser deposition, 14,15) and wet processes, such as chemical bath deposition, 29,30) mist chemical vapor deposition, 31) and spray pyrolysis, [32][33][34] are well-known methods for NiO thin film deposition. Among these, the spray pyrolysis method has the industrial advantage of enabling large-area deposition because it is simple and easy to use, performs non-vacuum deposition, has a low cost, and allows to easily control the composition ratio and doping.…”