1988
DOI: 10.1016/0379-6787(88)90030-0
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Reactive sputtered CuInSe2

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Cited by 66 publications
(22 citation statements)
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“…The grain size in Cu-rich films is in the range 0.7-0.9 mm and the grain size in Cu-poor films is in the range 0.3-0.65 mm. The same trend was observed in the case of Cu-rich and Cu-poor CuInSe 2 films [18]. The AFM images show that the grains are more densely packed in Cu-poor films compared to Curich films.…”
Section: Article In Presssupporting
confidence: 76%
“…The grain size in Cu-rich films is in the range 0.7-0.9 mm and the grain size in Cu-poor films is in the range 0.3-0.65 mm. The same trend was observed in the case of Cu-rich and Cu-poor CuInSe 2 films [18]. The AFM images show that the grains are more densely packed in Cu-poor films compared to Curich films.…”
Section: Article In Presssupporting
confidence: 76%
“…Especially interesting for the reactive sputtering of CZTS is the work done on other solar cell materials such as CuInS 2 (CIS) and CuInSe 2 (CISe). In the 1980s Thornton et al carefully investigated the process for reactively sputtered CISe [12,13]. Reactively sputtered CIS precursors, which were thereafter sulfurized, were investigated by Watanabe et al in the mid-90s and efficiencies of 6.3 % were reported [14].…”
Section: Introductionmentioning
confidence: 99%
“…In the last decade, only a few papers in the literature dealt with the deposition of ternary compound semiconductors by magnetron sputtering [41,42]. However, in the 1980s a big effort was undertaken at the University of Illinois (Urbana) by Thornton et al to prepare CuInSe 2 -thin-fi lm solar cells by reactive magnetron [43][44][45]. Obviously, the low effi ciencies achieved for solar cells [46] with sputtered absorbers led to the idea that sputtering is not suited for absorbers of good quality.…”
Section: Iron Disulfi De Pyrite Cuins 2 and Cu 2 Znsnsmentioning
confidence: 99%