Journal of Crystal Growth
 2008
DOI: 10.1016/j.jcrysgro.2008.03.005
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Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics

Ryusuke Onitsuka
1
,
Masakazu Sugiyama
2
,
Yukihiro Shimogaki
3
et al.
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Cited by 2 publications
(1 citation statement)
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“…Reflectance anisotropy signal was obtained using a Laytec EpiRAS system similar to the previous works [13,14].…”
Section: Methodsmentioning
confidence: 99%

Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs

Ma
1
,
Wang
2
,
Sodabanlu
3
et al. 2012
Journal of Crystal Growth
Self Cite
16
0
5
0
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“…Reflectance anisotropy signal was obtained using a Laytec EpiRAS system similar to the previous works [13,14].…”
Section: Methodsmentioning
confidence: 99%

Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs

Ma
1
,
Wang
2
,
Sodabanlu
3
et al. 2012
Journal of Crystal Growth
Self Cite
16
0
5
0
View full textAdd to dashboardCite

Mathematical modeling and optimal design of an MOCVD reactor for GaAs film growth

Chuang
1
,
Chen
2
2014
Journal of the Taiwan Institute of Chemical Engineers
36
0
15
0
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