Readout integrated circuit with multi-mode background suppression for long wavelength infrared focal plane arrays

Zhang, Wukang; Chen, Honglei; Ding, Ran

doi:10.1007/s11082-020-02644-7

Cited by 7 publications

(4 citation statements)

References 27 publications

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“…Infrared transparent conductive film is widely used in military and civilian infrared detectors, such as Infrared guidance, Infrared imaging, Infrared detection and Infrared methane/CO detector etc. ( Zhang et al, 2021 ), because of its remarkable optical transmittance in the Infrared light range and strong electromagnetic shielding ability. However, the traditional wide band gap oxide transparent conductive film such as ITO (Sn-doped In 2 O 3 ) and AZO (Al-doped ZnO) ( Jain et al, 2020 ; Khan et al, 2020 ), can only transmit visible light and near-infrared light, and has low transmittance in the mid- and far-infrared bands.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy

et al. 2022

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Epitaxial n-type infrared transparent conductive Bi2Se3 thin film was cultivated by molecular beam epitaxy (MBE) method on Al2O3 (001) substrate. The orientation between Bi2Se3 and the substrate is Bi2Se3(001)//Al2O3(1 2¯ 10). Conducting mechanism ensued the small-polaron hopping mechanism, with an activation energy of 34 meV. The film demonstrates conductivity of n-type, and the resistivity is 7 × 10−4 Ωcm at room temperature. The Film exhibits an excellent carrier mobility of 1,015 cm2/Vs at room temperature and retains optical transparency in the near-infrared (>70%) and far-infrared (>85%) ranges. To the best of our knowledge, the Bi2Se3 film yields the best result in the realm of n-type Infrared transparent conductive thin films generated through either physical or chemical methods. To demonstrate the application of such films, we produced N-Bi2Se3/P-CuScO2 heterojunction diode device, the ∼3.3 V threshold voltage of which conformed fairly well with the CuScO2 bandgap value. The high optical transparency and conductivity of Bi2Se3 film make it very promising for optoelectronic applications, where a wide wavelength range from near-infrared to far-infrared is required.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy

et al. 2022

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“…Due to a large dark current caused by background noise and the nonuniformity of the material, ROIC will face the problems of a small dynamic range and large spatial noise. Therefore, background and dark current suppression (BDS) circuits are required to reduce spatial noise and provide fast frame rates 253 . Various circuits are employed for FPAs, such as direct injection (DI) circuit 254 – 258 , capacitive transimpedance amplification input circuit (CTIA) 259 – 262 , and source follower per detector (SFD) 263 – 265 .…”

Section: Focal Plane Arraysmentioning

confidence: 99%

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

et al. 2021

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Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.

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“…When evaluating the ability of space-based detection systems to detect targets, the signal-to-clutter ratio (SCR) and signal-to-noise ratio (SNR) are commonly used as the evaluation index. (Huang, F. et al 2012;Zhang, W. et al 2021;Hu, Z. et al 2019;Zavvari, M. et al 2015;Ma, T. et al 2021) Caroline, S. used SCR as a criterion to analyze the detectability of missiles in different infrared bands and discussed the impact of different observation scenes and spatial resolution on SCR (Schweitzer, C. et al 2012). Yuan, H. calculated the local SCR at the aircraft plume position in three bands to analyze the detectability under the sea/cloud background from space-based platform Yuan, H. et al 2020).…”

Section: Introductionmentioning

confidence: 99%

A novel detection performance modular evaluation metric of space-based infrared system

Zhou

Zhang

et al. 2022

Opt Quant Electron

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In order to reflect the space-based full chain information of the detection process comprehensively and objectively, we proposed a novel modular evaluation metric to discuss the target, background and system independently. It takes the equivalent radiation intensity as the parameter, which can evaluate the detection performance of the system quantitatively. In this paper, taking the fifth-generation American stealth fighter F22 as an example, the mathematical detection model of the space-based infrared system to aircraft targets in the Earth background is described. A modular evaluation metric is proposed. The simulation analyzes the impact of different detection scenes and system parameters on system equivalent irradiance. Furthermore, recommendations for the optimization of the detection system are given. The research results provide a new idea for the analysis of the detection performance of highly maneuverable targets under dynamic backgrounds and have guiding significance for the performance evaluation and parameter design of the infrared detection system.

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Readout integrated circuit with multi-mode background suppression for long wavelength infrared focal plane arrays

Cited by 7 publications

References 27 publications

Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy

Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

A novel detection performance modular evaluation metric of space-based infrared system

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