Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack

Servin, Isabelle; Thiam, N.; Pimenta-Barros, Patricia; Pourteau, Marie-Line; Mebiene, Armel-Petit; Jussot, J.; Pradelles, Jonathan; Essomba, Philippe; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

doi:10.1117/12.2085915

Cited by 12 publications

(8 citation statements)

References 7 publications

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“…Nevertheless E-beam CARs are still limited by the Line Width Roughness (LWR). Even though the LWR is equivalent to EUV's achievements [2], it remains above the ITRS specifications (< 8 % of CD, leading to LWR < 3.4 nm at 28 nm node). Biasing the design improves the LWR, but brings the dose-to-size out of specifications.…”

Section: Introductionmentioning

confidence: 95%

“…Top-coat materials have already been tested and were proven to significantly reduce the hydrocarbon molecules release into POS environment [5]. However, we also determined that they degrade the lithographic process, introducing dark erosion and top-corner rounding [2]. A new top-coat generation was specially designed to address this issue and results are presented in this paper.…”

Section: Introductionmentioning

confidence: 97%

“…In particular, CEA-Leti is developing the process and integration aspects required by this multi-beam approach, targeted to address 90 nm to 28 nm technology nodes. A complete stack has already been qualified for FLX-1200 tool [2], including high sensitivity CAR, SOC and Si-HM underlayers, and an outgassing mitigation top-coat layer.…”

Section: Introductionmentioning

confidence: 99%

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Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

et al. 2016

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The emerging Massively Parallel-Electron Beam Direct Write (MP-EBDW) is an attractive high resolution high throughput lithography technology. As previously shown, Chemically Amplified Resists (CARs) meet process/integration specifications in terms of dose-to-size, resolution, contrast, and energy latitude. However, they are still limited by their line width roughness. To overcome this issue, we tested an alternative advanced non-CAR and showed it brings a substantial gain in sensitivity compared to CAR. We also implemented and assessed in-line postlithographic treatments for roughness mitigation.For outgassing-reduction purpose, a top-coat layer is added to the total process stack. A new generation top-coat was tested and showed improved printing performances compared to the previous product, especially avoiding dark erosion: SEM cross-section showed a straight pattern profile. A spin-coatable charge dissipation layer based on conductive polyaniline has also been tested for conductivity and lithographic performances, and compatibility experiments revealed that the underlying resist type has to be carefully chosen when using this product.Finally, the Process Of Reference (POR) trilayer stack defined for 5 kV multi-e-beam lithography was successfully etched with well opened and straight patterns, and no lithography-etch bias.

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 97%

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Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

et al. 2016

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“…The driving force of this steady reduction in feature size has been the evolution of lithography, as improvements in optical lithography have provided sufficient resolution to reach the 10 nm semiconductor node by means of deep ultraviolet (DUV) immersion lithography [ 3 , 4 , 5 , 6 ]. However, for further scaling, light diffraction limitations have led to the exploration of new lithographic solutions [ 7 ], which include extreme ultraviolet lithography (EUV) [ 8 ], nanoimprint lithography [ 9 ], multi-beam electron-beam lithography [ 10 ] and directed self-assembly (DSA) of block copolymers (BCPs) [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

et al. 2020

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Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

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“…Writing high resolution features with a directed e-beam is intrinsically slow, so in order to get sufficient throughput, massively parallel writing with thousands of independently directed e-beams is necessary making high volume manufacturing possible. Evaluation of several approaches is underway to overcome EBL challenges [13][14][15][16].…”

Section: E-beam Lithographymentioning

confidence: 99%

Critical Review of Current Trends in ASIC Writing and Layout Analysis

Vikram¹,

Agarwal

2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Electrical Designs for Application SpecificIntegrated Circuits (ASIC) has undergone a change recently with the advent of the sub-wavelength lithography. The optical projection with 193 nm wavelength has been further extended with the use of immersion and other techniques. The competing trends for printing smaller design features have been discussed in this paper with the discussion of the electrical layout analysis to find unfriendly design features. The early knowledge of the unfriendly design features allows remedial actions in time for better yield on the wafer. There are existing standard design qualification criteria being used in the design and fabrication community, but they seem to be insufficient to guarantee defect free designs. This paper proposes an integrated approach for screening the layout with multiple aspects: layout geometry based, graphical analysis and process model based verification. The results have been discussed with few example design features from the 28nm design layout.

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Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack

Cited by 12 publications

References 7 publications

Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Critical Review of Current Trends in ASIC Writing and Layout Analysis

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