Real-space imaging of single-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>by scanning tunneling microscopy

Qin, X. R.; Yang, D.; Frindt, R. F.; Irwin, J. C.

doi:10.1103/physrevb.44.3490

Cited by 79 publications

(57 citation statements)

References 15 publications

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“…Their superconducting properties, as well as the charge density wave, are expected to differ from the bulk. [51][52][53][54][55] In these systems, the strain induced in the fabrication method is possibly significant and will be of importance in the pairing interaction. The pressure dependence of the bulk properties should be thus useful to predict and understand the modifications which found a size reduction down to single or few layers.…”

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confidence: 99%

Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2

et al. 2013

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We present measurements of the superconducting critical temperature T c and upper critical field H c2 as a function of pressure in the transition metal dichalcogenide 2H -NbS 2 up to 20 GPa. We observe that T c increases smoothly from 6 K at ambient pressure to about 8.9 K at 20 GPa. This range of increase is comparable to the one found previously in 2H -NbSe 2 . The temperature dependence of the upper critical field H c2 (T ) of 2H -NbS 2 varies considerably when increasing the pressure. At low pressures, H c2 (0) decreases, and at higher pressures both T c and H c2 (0) increase simultaneously. This points out that there are pressure induced changes of the Fermi surface, which we analyze in terms of a simplified two-band approach.

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Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2

et al. 2013

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“…Unlike 2H -MoS 2 , the 1T -MoS 2 phase has metallic properties and an octahedral structure [5]. This phase is metastable and relaxes to the distorted 1T one with clustering of the Mo sites and the formation of Mo chains [6,7]. The 1T phase is semiconducting whose band gap has not been measured directly, but calculations yield values ranging from 0.08 eV [8] to 0.8 eV [9].…”

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confidence: 99%

Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′−MoS2

2017

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We have studied temperature-and electric-field-dependent carrier transport in single flakes of MoS 2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two-and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

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“…For example MoS 2 thin film undergoes a transition from an indirect-gap semiconductor with a gap of 1.2 eV in bulk form to a direct-gap one with a band gap of 1.9 eV in monolayers, 4,5 and as well as a possible structural change. [28][29][30] These distinct physical properties make atomically thin MoS 2 crystal attractive for diverse applications such as electronic devices, spintronics, photovoltaic, energy storage, etc.…”

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Low-frequency Raman modes and electronic excitations in atomically thin MoS2films

et al. 2012

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Atomically thin MoS2 crystals have been recognized as a quasi-2D semiconductor with remarkable physical properties. This letter reports our Raman scattering measurements on multilayer and monolayer MoS2, especially in the low-frequency range (<50 cm −1 ). We find two low-frequency Raman modes with contrasting thickness dependence. With increasing the number of MoS2 layers, one shows a significant increase in frequency while the other decreases following a 1/N (N denotes the number of unit layers) trend. With the aid of first-principles calculations we assign the former as the shear mode E 2 2g . The latter is distinguished as the compression vibrational mode, similar to the surface vibration of other epitaxial thin films. The opposite evolution of the two modes with thickness demonstrates novel vibrational modes in atomically thin crystal as well as a new and more precise way to characterize thickness of atomically thin MoS2 films. In addition, we observe a broad feature around 38 cm −1 ( 5 meV) which is visible only under near-resonance excitation and pinned at the fixed energy independent of thickness. We interpret the feature as an electronic Raman scattering associated with the spin-orbit coupling induced splitting in conduction band at K points in their Brillouin zone.

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Real-space imaging of single-layerMoS2by scanning tunneling microscopy

Cited by 79 publications

References 15 publications

Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2

Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2

Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′−MoS2

Low-frequency Raman modes and electronic excitations in atomically thin MoS2films

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