Real-space investigation of the charge density wave in 
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 monolayer with broken rotational and mirror symmetries

Miao, Guangyao; Xue, Siwei; Li, Bo; Lin, Zijian; Liu, Bing; Zhu, Xuetao; Wang, Weihua; Guo, Jiandong

doi:10.1103/physrevb.101.035407

Cited by 26 publications

(23 citation statements)

References 36 publications

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“…Recently, there has been much progress in the experimental synthesis of vanadium dichalcogenides, a class of materials with exotic physical properties, such as charge‐density‐wave behavior and robust room‐temperature ferromagnetism . VTe 2 , which shows more complicated phases and thus rich phase‐transition phenomena, has been gaining increasing attention . As another test case, we model a T‐VTe 2 CS‐FET.…”

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confidence: 99%

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A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

et al. 2019

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The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy relation (D(E)), engineering the source: channel interface for gate-tunable channel-barrier is crucial to a CS-FET. However, conventional metal: semiconductor (MS)-interfaces generally suffer from strong Fermi-level-pinning due to the inevitable chemical disorder and defect-induced gap states, precluding the gate-tunability of the barriers. By comprehensive materials and device modeling at the atomic-scale, we report that the two-dimensional (2D)-van der Waals (vdW)-MS-interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS-FETs. As test cases, InSe-based n-type FETs are studied. It is found that graphene can be spontaneously p-type doped along with slightly opened bandgap around the Dirac-point by interfacing with InSe, resulting in super-exponentially decaying hot carrier density with increasing n-type channel-barrier. Moreover, the D(E) relations suggest that 2Dtransition-metal-dichalcogenides and 2D-transition-metal-carbides are rich libraries of CS materials. Both graphene and H-TaTe2 CSs lead to subthreshold swing below 60 mV/decade. This work broadens the application potentials of 2D-vdW-MSheterostructures and serves as a springboard for more studies on low-power electronics based on 2D materials.

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confidence: 99%

“…[43][44][45] VTe 2 , which shows more complicated phases and thus rich phase-transition phenomena, has been gaining increasing attention. [46][47][48][49] As another test case, we model a T-VTe 2 CS-FET.…”

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confidence: 99%

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

et al. 2019

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“…8 of Appendix E). This pseudogap was initially explained in terms of CDW fluctuations in the previous ARPES study 28 , whereas the subsequent STM and LEED experiments 30,31 reported the 4×4 CDW and attributed the pseudogap to the CDW gap due to the FS nesting in the flat segments of triangular FS 30 (see also Appendix E). We found from the analysis of reflectionhigh-energy-electron-diffraction (RHEED) patterns that the 1T ' structure is immediately formed when the film thickness reaches 2ML during epitaxy (see Fig.…”

Section: Energy Gap and Cdwmentioning

confidence: 95%

“…Bulk VTe 2 forms the monoclinic 1T " phase with 3×1×3 PLD and undergoes a structural transition to the polymorphic 1T structure at T = 482 K [25][26][27] . On the other hand, monolayer VTe 2 stabilizes with the 1T structure [28][29][30][31][32][33] and exhibits the 4×4 CDW [25][26][27] . Although the relationship between fermiology and PLD as well as the origin of different crystal structures between monolayer and bulk have been intensively discussed, these key questions 34,35 are still controversial [34][35][36][37] .…”

Section: Introducitonmentioning

confidence: 99%

Electronic states of multilayer VTe2: quasi-one-dimensional Fermi surface and implications to charge-density waves

Kawakami,

Sugawara,

Kato

et al. 2021

Preprint

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“…In experiment, an angle-resolved photoemission spectroscopy (ARPES) study revealed that the CDW order opens an anisotropic gap near the Fermi level [17]. The microscopic images of CDW modulations obtained with scanning tunneling microscope (STM) show different phase shifts relative to the lattice implying an inter-unit-cell distribution of orbitals [16,[18][19][20]. These experimental findings suggest a nonuniform distribution of the CDW orders in real space.…”

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confidence: 99%

Orbital-collaborative charge density waves in monolayer VTe2

Wang

Guo

et al. 2020

Phys. Rev. B

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Charge density waves in transition metal dichalcogenides have been intensively studied for their close correlation with Mott insulator, charge-transfer insulator, and superconductor. VTe2 monolayer recently comes into sight because of its prominent electron correlations and the mysterious origin of CDW orders. As a metal of more than one type of charge density waves, it involves complicated electron-electron and electronphonon interactions. Through a scanning tunneling microscopy study, we observed triple-Q 𝟒 × 𝟒 and single-Q 𝟒 × 𝟏 modulations with significant charge and orbital separation. The triple-Q 𝟒 × 𝟒 order arises strongly from the p-d hybridized states, resulting in a charge distribution in agreement with the V-atom clustering model. Associated with a lower Fermi level, the local single-Q 𝟒 × 𝟏 electronic pattern is generated with the p-d hybridized states remaining 𝟒 × 𝟒 ordered. In the spectroscopic study, orbital-and atomic-selective chargedensity-wave gaps with the size up to ~𝟒𝟎𝟎 𝒎𝒆𝑽 were resolved on the atomic scale.

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Real-space investigation of the charge density wave in VTe2 monolayer with broken rotational and mirror symmetries

Cited by 26 publications

References 36 publications

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

Electronic states of multilayer VTe2: quasi-one-dimensional Fermi surface and implications to charge-density waves

Orbital-collaborative charge density waves in monolayer VTe2

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