2019
DOI: 10.1021/acsanm.9b01240
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Real-Time 3D Imaging of Nanoscale Ferroelectric Domain Wall Dynamics in Lithium Niobate Single Crystals under Electric Stimuli: Implications for Domain-Wall-Based Nanoelectronic Devices

Abstract: Challenges in the fields of renewable energy harvesting, data storage, and nanoelectronics have resparked interest in ferroelectric domain walls (DWs) as tunable, nanoscale elements. However, the study of such structures has mostly relied on 2-dimensional, rather slow imaging techniques such as scanning probe microscopy. Therefore, Cherenkov second harmonic generation (CSHG) microscopy has been established as a technique suitable for the nondestructive imaging of ferroelectric DWs and their 3dimensional (3D) e… Show more

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Cited by 48 publications
(18 citation statements)
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“…Complete information about domain shape in the bulk was obtained by CSHG. The 3D images of domains in CVO crystals were more complicated than those of domains formed during polarization reversal in lithium niobate (LN) and lithium tantalate (LT) crystals, which typically demonstrate a small tilt of the domain walls from the polar direction [13,14]. The domain wall images in the bulk of CVO crystals represent interferometric patterns (Figure 3), which, according to Kampfe et al [15], correspond to abnormally tilted charged domain walls.…”
Section: Bulk Domain Structurementioning
confidence: 94%
“…Complete information about domain shape in the bulk was obtained by CSHG. The 3D images of domains in CVO crystals were more complicated than those of domains formed during polarization reversal in lithium niobate (LN) and lithium tantalate (LT) crystals, which typically demonstrate a small tilt of the domain walls from the polar direction [13,14]. The domain wall images in the bulk of CVO crystals represent interferometric patterns (Figure 3), which, according to Kampfe et al [15], correspond to abnormally tilted charged domain walls.…”
Section: Bulk Domain Structurementioning
confidence: 94%
“…[ 12,14,16–19 ] Consequently, there is a need to understand and investigate domain wall conduction behavior at the level of a single domain wall not just at the surface but concomitantly within the bulk. [ 52,165,166 ] The role of several factors, for example, defects/defect chemistry, strain, chirality, built‐in fields, charge screening, 3D electronic, and atomic details at the domain walls, need to be carefully elucidated to build a comprehensive model for the development of universal materials processing technologies for engineering domain walls with reproducible conductivity values. Careful control of all these factors presents a challenge from the perspective of materials growth, and can possibly be addressed through novel materials and material processing methodologies. ii)Domain wall currents are typically low, ranging from pA to nA and are insufficient for high‐speed operation at the nanosecond timescales or better.…”
Section: What Still Needs To Happen To Advance the Fieldmentioning
confidence: 99%
“…It is frequently applied to bulk samples, since it allows fast, large-scale, and non-destructive 3D imaging with a diffraction-limited optical resolution [25,[42][43][44][45]. The high speed of this technique facilitates in situ imaging of FE domains and domain walls in bulk samples under external stimuli, such as electric fields or temperature [46][47][48][49]. In SHG microscopy, the contrast mechanism relies on probing the second-order susceptibility tensor χ (2) , whose properties are directly connected to the FE domain orientation.…”
Section: Second-harmonic Generation Microscopymentioning
confidence: 99%