Real-time observation of FIB-created dots and ripples on GaAs

Rose, Franck; Fujita, Hiroyuki; Kawakatsu, Hideki

doi:10.1088/0957-4484/19/03/035301

Cited by 23 publications

(9 citation statements)

References 25 publications

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“…For instance, group III metallic nanodots and clusters show interesting optical qualities 1,2 that make them promising for use in negative index of refraction materials. [7][8][9][10] Both of these methods provide a simple synthesis route for the creation of nanostructures over large areas, but a drawback is that those nanostructures may be at random locations and in a distribution of sizes. 6 While it is possible to create group III dots by direct deposition of metal atoms on a surface, [3][4][5] it is also possible to induce their formation in compound semiconductors using ion irradiation.…”

Section: Introductionmentioning

confidence: 99%

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Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors

Grossklaus

Millunchick

2011

Journal of Applied Physics

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We have examined the responses of GaAs, InP, InAs, and AlAs to 30 keV focused ion beam ͑FIB͒ irradiation and applied a unified model that consistently explains the observed effects. Nanodots were observed to form on GaAs, InP, and InAs under irradiation at normal incidence, while nanodots are not observed on AlAs. The FIB response and nanodot formation behavior of each material is discussed with regard to a few basic material properties and a model for nanodot creation and growth by the action of preferential sputtering and Ostwald ripening. The model predicts the development of a stable average nanodot size with increasing ion dose, with the average nanodot size depending on the excess group III adatom yield, adatom surface diffusion rate, and surface tension. These predictions qualitatively agree with the experimentally observed trends for GaAs and InP. They also agree for the initial nanodot formation on InAs, but this material system exhibits a sudden transition in the nanodot size distribution. The model predicts that nanodots will have difficulty forming and growing on AlAs, which is also in agreement with our experimental results.

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Section: Introductionmentioning

confidence: 99%

“…The Ga + FIB response of GaAs, 7,10,11,14,15 InP, 13 InAs, 8 and GaSb ͑Refs. The Ga + FIB response of GaAs, 7,10,11,14,15 InP, 13 InAs, 8 and GaSb ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors

Grossklaus

Millunchick

2011

Journal of Applied Physics

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“…Ion beam induced surface modifications at different incident angles have been reported before in some materials, including Si, 12 Au, 12 GaAs, 13 Sn, 14 diamond, [15][16][17] polyimide 18 and water ice. [19][20] The formation of selfassembled ripples, steps or terraces offers new applications of FIB processing.…”

Section: Introductionmentioning

confidence: 66%

Focused-Ion-Beam Induced Nano Feature Self-Assembly on Glassy Carbon

Hu¹,

O’Neill²

2011

j nanosci nanotechnol

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Glassy carbon is an advanced non-graphitizing carbon material with many unique properties. This work explores the surface modification and machining characteristics of glassy carbon when subject to a Focused Ion Beam (FIB) over a range of incident angles. A FIB system delivering a 30 keV Ga+ ion beam was used to irradiate the surface of polished glassy carbon substrates. On irradiation at incident angles less 40 degrees, the surface is smooth and uniform. Nano particle deposits were observed on the irradiated floor and sidewalls after prolonged irradiation. With incident angles over 40 degrees, the irradiated area exhibits nano-scale patterns in the form of ripples, steps and columnar features. The evolution of these structures increases with the incident angle. The orientation of the nano features changes from parallel to perpendicular with respect to the direction of propagation of the ion beam. Although the simultaneous formation of nano features could be problematic for applications such as ion milling or polishing, they offer an effective means of developing nano-scale surface modification at the point of irradiation. Possible applications are discussed.

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“…The surface of GaAs responds to FIB depending on the fluence, as described in (12). However, in the present study, we investigated the fluence range of about ∼ 10 16 ions/cm 2 and concentrated only on the nanodot formation regime.…”

Section: Resultsmentioning

confidence: 99%

“…GaAs processing by FIBs has three different regimes depending on the fluence: (i) at low fluence, nanodots form on the surface of GaAs; (ii) at moderate fluence, ripples along with these dots are also present; and (iii) at higher fluence, ripples are transformed to micro-planes (12). Several works on the understanding of the mechanism of nanodot formation, their alignment and size distribution have been reported (11)(12)(13). The nanodots have been identified to be pure gallium using energy-dispersive X-ray spectrometry and cross-sectional transmission electron microscopy (13).…”

Section: Introductionmentioning

confidence: 99%

Controlling the nanodot formation on GaAs surface during focused ion beam processing

Dhamodaran

Ramkumar

2010

Radiation Effects and Defects in Solids

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GaAs processed using gallium-focused ion beams for the fabrication of photonic devices mostly results in gallium nanodots on the surface. These gallium nanodots may produce unwanted effects and deteriorate the optical and electrical properties of the devices. We have investigated the FIB processing of GaAs with and without exposure to an insulator-enhanced etching precursor gas (XeF 2 ) to explore the use of XeF 2 during GaAs processing. It is reported that without the gas, FIB processing results in nanodots on the surface that vary in size and density depending on processing parameters such as incident energy, beam current, angle and dwell time. Processing with insulator (XeF 2 )-enhanced etching gas irrespective of the process parameters eliminates the nanodots and results in a smooth surface, as characterized by scanning electron microscopy and atomic force microscopy. This method will be useful for surfaces which require dry processing without exposure to any wet chemical etching.

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Real-time observation of FIB-created dots and ripples on GaAs

Cited by 23 publications

References 25 publications

Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors

Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors

Focused-Ion-Beam Induced Nano Feature Self-Assembly on Glassy Carbon

Controlling the nanodot formation on GaAs surface during focused ion beam processing

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