Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)

Anisotropic kinetics on growing Ge(0 0 1) surfaces

“…The growing Ge(0 0 1) surface shows alternating (2 Â 1) and (1 Â 2) reconstructions. Since RD response changes its polarity by switching the dimer direction [13], it is likely that the observed oscillations are attributed to periodic variations in the relative (2 Â 1)/(1 Â 2) coverage, similar to the case for Si/Si(0 0 1) homoepitaxy [3,4]. Fig.…”

“…Oscillations in RD response with a period corresponding to one bilayer were observed, which is attributed to variations in relative coverages of alternating (2 Â 1) and (1 Â 2) domains [3,4]. On the other hand, oscillatory behaviors in RHEED intensities are rather complicated and monolayer-and bilayer-period oscillations are observed [3,4,[6][7][8][9]. Although RHEED oscillations could be explained by the changing surface morphology, the detailed explanation for the two types of oscillation modes still remains an open question.…”

“…A direct comparison between the RDS and RHEED results has been made for Si(0 0 1) [3,4]. Oscillations in RD response with a period corresponding to one bilayer were observed, which is attributed to variations in relative coverages of alternating (2 Â 1) and (1 Â 2) domains [3,4].…”

“…In particular, temporal oscillations in RHEED intensities allow an in situ monitoring of growth rate in MBE with monolayer precision. Oscillatory behaviors have been also observed in reflectance difference (RD) spectra in several systems, such as GaAs(0 0 1) [1,2] and Si(0 0 1) [3,4]. RDS, which measures the difference in normal-incidence reflectances between two orthogonal polarizations of light, is surface-sensitive optical method [5].…”

The Potential of Reflection Anisotropy Spectroscopy as a Probe of Molecular Assembly on Metal Surfaces

“…The technique was originally developed for the study of semiconductor surfaces [1,2] and has found use as an in-situ monitor of semiconductor growth [3][4][5][6][7][8][9]. The extensive work on semiconductor surfaces has demonstrated the surface sensitivity of RAS with the detection of reconstructions [10,11], dimer orientations [12,13], metal adsorption [14,15] and the monitoring of changes in domain size caused by thermal processing [16].…”