Real-time soft-error rate measurements: A review

Autran, Jean‐Luc; Munteanu, Daniéla; Roché, Philippe; Gasiot, Gilles

doi:10.1016/j.microrel.2014.02.031

Cited by 31 publications

(30 citation statements)

References 44 publications

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“…15-MeV neutrons cross-section for the A-LPSRAM at ultra-low bias voltage for classical SEUs (neither clusters nor hard errors included). Error bars were calculated with 95%-confidence from the number of events using the standard technique shown in [7], [16]. If MCUs had occurred, they would have been included in the cross section values.…”

Section: Resultsmentioning

confidence: 99%

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

Clemente

Franco

Villa

et al. 2016

IEEE Trans. Nucl. Sci.

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This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported.

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Section: Resultsmentioning

confidence: 99%

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

Clemente

Franco

Villa

et al. 2016

IEEE Trans. Nucl. Sci.

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“…For numerous events (typically >100), the Poisson distribution can be used to calculate such margins. However, in this situation the most accurate and universal way to calculate the uncertainty margins consists in using the relationship between the cumulative distribution functions of the Poisson and chisquared distributions as described in [19], [20]. Therefore, the following equation has been applied:…”

Section: A Static Cross Sectionmentioning

confidence: 99%

Evaluating the SEE Sensitivity of a 45 nm SOI Multi-Core Processor Due to 14 MeV Neutrons

Ramos

Vargas

Baylac

et al. 2016

IEEE Trans. Nucl. Sci.

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Abstract-The aim of this work is to evaluate the SEE sensitivity of a multi-core processor having implemented ECC and parity in their cache memories. Two different application scenarios are studied. The first one configures the multi-core in Asymmetric Multi-Processing mode running a memory-bound application, whereas the second one uses the Symmetric Multi-Processsing mode running a CPU-bound application. The experiments were validated through radiation ground testing performed with 14 MeV neutrons on the Freescale P2041 multi-core manufactured in 45nm SOI technology. A deep analysis of the observed errors in cache memories was carried-out in order to reveal vulnerabilities in the cache protection mechanisms. Critical zones like tag addresses were affected during the experiments. In addition, the results show that the sensitivity strongly depends on the application and the multi-processsing mode used.

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“…This method is called "real-time" soft error rate (RTSER) test [25][26][27] or unaccelerated testing. In this method, as in accelerated testing, the intensity of the natural radiation can be increased by deploying the test in altitude (at least for neutrons).…”

Section: See Characterization Using Accelerated and Real-time Testsmentioning

confidence: 99%

“…Fig. 4 summarizes these three different approaches in the form of a two-dimensional chart, qualitatively highlighting test specificities of each approach [27]. It highlights the fundamental differences between RTSER and ASER test strategies, notably in terms of test duration, number of devices, test cost, test setup complexity and experimental artifacts.…”

Section: See Characterization Using Accelerated and Real-time Testsmentioning

confidence: 99%

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Radiation and COTS at ground level

Autran

Munteanu

2015

Microelectronics Reliability

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Real-time soft-error rate measurements: A review

Cited by 31 publications

References 44 publications

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

Evaluating the SEE Sensitivity of a 45 nm SOI Multi-Core Processor Due to 14 MeV Neutrons

Radiation and COTS at ground level

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