Real-time spectroscopic ellipsometry studies of diamond film growth by microwave plasma-enhanced chemical vapour deposition

Hong, Byungyou; Wakagi, Masatoshi; Collins, R. W.; An, Ilsin; Engdahl, Niels Chris; Drawl, W.; Messier, R.

doi:10.1016/0925-9635(94)90198-8

Cited by 25 publications

(28 citation statements)

References 10 publications

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“…Similar observations of decreasing sp 2 carbon fraction with increasing film thickness have been made by in situ spectroscopic elliposometry. 12 After 200 min, more noise is evident in the attenuation measurement, which fluctuates around zero. This is due to increasing scattering losses, a result of the increasing film surface roughness, which must be accounted for by the model.…”

Section: Resultsmentioning

confidence: 99%

In situ laser reflectance interferometry measurement of diamond film growth

Zuiker

Gruen

Krauss

1996

Journal of Applied Physics

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A model is presented to interpret in situ laser reflectance interferometry (LRI) measurements of film growth. The model uses no adjustable parameters and measures film thickness, growth rate, attenuation, and root-mean-square (rms) surface roughness in situ and in real time. For the particular case of diamond film growth on silicon substrates, it is shown that the assumptions of the model are satisfied, and that film properties determined in situ by LRI and by various means ex situ are in good agreement. With this model, the evolution of diamond film properties are followed under typical diamond growth conditions using mixtures of CH4 and H2. In agreement with texture formation models, the growth rate and surface roughness were observed to increase as film growth progressed. The growth rate was found to be proportional to CH4 fraction for CH4 fractions less than 8.5%. At higher CH4 fractions, the growth rate decreased and significant attenuation was observed.

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Section: Resultsmentioning

confidence: 99%

In situ laser reflectance interferometry measurement of diamond film growth

Zuiker

Gruen

Krauss

1996

Journal of Applied Physics

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“…A variety of optical characterization methods such as reflectance and transmittance measurements [44], Fourier transform infrared spectroscopy (FTIR) [45], spectroscopic ellipsometry (SE) [46][47][48][49][50], and electron energy loss spectroscopy (EELS) [51] have been applied to the identification of the microstructure giving rise to the various optical and electronic properties. Among several state-of-the art techniques for optical characterization, spectroscopic ellipsometry (SE) proved to be very influential and advantageous for the last two decades in the semiconductor thin film process control and structural analysis, in general and for amorphous silicon thin films in particular [4,48,[52][53][54][55][56][57][58][59][60].…”

Section: Introductionmentioning

confidence: 99%

Role of H in hot-wire deposited a-Si:H films revisited: optical characterization and modeling

Gupta¹,

Morell²,

Weiner³

2004

Journal of Non-Crystalline Solids

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“…As a rule, the optical response of the a-C:H/Si system is modelled by a multilayer structure [10,14,29]. A graded layer can model the substrate-DLC interface [29].…”

Section: Resultsmentioning

confidence: 99%

“…Recently, DLC thin films grown on Si substrates by plasma-enhanced chemical vapour deposition were widely studied [8][9][10][11][12][13][14]. The optical techniques of spectroscopic ellipsometry and Raman light scattering were frequently used for real-time in situ [12,15] and ex situ characterization of DLC films.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of amorphous hydrogenated carbon films

Babonas¹,

Rėza²,

Grigonis³

et al. 2004

Lith. J. Phys.

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Amorphous diamond-like hydrogenated carbon films grown on a Si substrate from C2H2 + H2 plasma were investigated. The ellipsometric and reflectance technique was used to reveal the optical constants of a-C:H films from the optical response of the complex system in the UV-VIS-NIR spectral range of 0.5-5.0 eV. The model of an effective film was used for a-C:H films though in the analysis of the optical response a multilayer model was applied. Particular features of optical properties were correlated to the technological peculiarities and structural characteristics of a-C:H films grown from C2H2 + H2 plasma.

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Real-time spectroscopic ellipsometry studies of diamond film growth by microwave plasma-enhanced chemical vapour deposition

Cited by 25 publications

References 10 publications

In situ laser reflectance interferometry measurement of diamond film growth

In situ laser reflectance interferometry measurement of diamond film growth

Role of H in hot-wire deposited a-Si:H films revisited: optical characterization and modeling

Optical properties of amorphous hydrogenated carbon films

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