Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale

Schmiedeke, Paul; Panciera, Federico; Harmand, Jean-Christophe; Travers, Laurent; Koblmüller, Gregor

doi:10.1039/d3na00135k

Cited by 2 publications

(2 citation statements)

References 59 publications

(111 reference statements)

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“…An alternative method to control the diameter of NWs is reverse-reaction growth or thermal decomposition/etching via post-growth treatment. This was reported for GaN NWs in [32] and for MBE-grown GaAs [15,33,34] and InAs NWs [35]. Using this method, the lateral quantum confinement and its variation with NW size were successfully confirmed.…”

Section: Introductionsupporting

confidence: 63%

“…The dependence of the thermal stability on the NW size would be plausible if one considered the cross-sectional shape of the NWs after annealing, where they were closer to the hexagon for NWs with d = 240 nm but were more rounded and almost circular for those with d = 120 nm, as shown in figures 1 and 2. It is also possible that the decomposition is accelerated in thinner NWs because the decomposition of flat facet sidewalls is slower than that of rough sidewalls, as demonstrated in [34]. In general, the In atom density at the top of the NW during annealing depends on the number of In atoms that decompose and diffuse from the sidewalls, number of In atoms that are recrystallized and incorporated into the NW, and the amount of In atoms that evaporate.…”

Section: Mechanism Of Shape Change During Annealingmentioning

confidence: 99%

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Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Sasaki,

Akamatsu,

Tomioka

et al. 2024

Nanotechnology

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We carried out in-situ annealing of InP Nanowires (NWs) in a metal-organic vapor phase epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs were grown by selective-area (SA) MOVPE on partially masked (111)A InP substrates, and annealing was successively applied in tertiarybutylphosphine (TBP) ambient. Initially, InP NWs had a hexagonal cross-section with {11-2} facets vertical to the substrates; they became tapered, and edges were rounded by annealing. By appropriately selecting the annealing temperature and initial NW diameter, the tip size of the NW was reduced and NWs with a tip size of 20nm were successfully formed. Subsequently, a thin InAsP layer was grown on the annealed NWs and their photoluminescence was investigated at low temperatures. The characterization results indicated the formation of InAsP quantum dots (QDs) emitting in the telecom band. Our approach is useful for reducing the size of NWs and for the controlled formation of InAsP QDs embedded in InP NWs in photonic devices compatible with telecom bands.

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Section: Introductionsupporting

confidence: 63%

Section: Mechanism Of Shape Change During Annealingmentioning

confidence: 99%

Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Sasaki,

Akamatsu,

Tomioka

et al. 2024

Nanotechnology

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Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires

Dad,

Dziawa,

Zajkowska-Pietrzak

et al. 2024

Sci Rep

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We investigate the full and half-shells of Pb1−xSnxTe topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV–VI shell with respect to the III–V core the lattice mismatch between both materials along the nanowire axis is less than 4%. The Pb1−xSnxTe solid solution is chosen due to the topological crystalline insulator properties above some critical concentrations of Sn (x ≥ 0.36). The IV–VI shells are grown with different compositions spanning from binary SnTe, through Pb1−xSnxTe with decreasing x value down to binary PbTe (x = 0). The samples are analysed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100) Pb1−xSnxTe on the sidewalls of wurtzite GaAs NWs.

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Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale

Abstract: Nanowires (NWs) offer unique opportunities for tuning the properties of III-V semiconductors by simultaneously controlling their nanoscale dimensions and switching their crystal phase between zinc-blende (ZB) and wurtzite (WZ). While...

Cited by 2 publications

References 59 publications

Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires

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