2009
DOI: 10.1007/s00339-008-5012-2
|View full text |Cite
|
Sign up to set email alerts
|

Real-time X-ray diffraction measurements of structural dynamics and polymorphism in diindenoperylene growth

Abstract: We investigate the temperature-dependent polymorphs in diindenoperylene (DIP) thin films on sapphire and silicon oxide substrates using in situ X-ray scattering. On both substrates the DIP unit cell is very similar to the high-temperature phase of bulk crystals, with the substrate stabilising this structure well below the temperature where a phase transition to a low-temperature phase is observed in the bulk. Lowering the substrate temperature for DIP growth leads to a change in molecular orientation and an ad… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

8
54
2

Year Published

2010
2010
2023
2023

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 42 publications
(64 citation statements)
references
References 30 publications
8
54
2
Order By: Relevance
“…The SIP of 8 , as reported by Durr et al, is identical in structure to the high temperature β ‐phase . It must be noted here that the substrate acts to stabilize the β ‐phase structure ≈200 K below the temperature where a phase transition to a low temperature phase is observed in the bulk . In‐situ GIXD measurements studying the film growth of 8 on different substrates showed that the first monolayer consisted of molecules in a more upright orientation, similar to the monolayer structure of 1 .…”
Section: Experimentally Observed Sipssupporting
confidence: 80%
“…The SIP of 8 , as reported by Durr et al, is identical in structure to the high temperature β ‐phase . It must be noted here that the substrate acts to stabilize the β ‐phase structure ≈200 K below the temperature where a phase transition to a low temperature phase is observed in the bulk . In‐situ GIXD measurements studying the film growth of 8 on different substrates showed that the first monolayer consisted of molecules in a more upright orientation, similar to the monolayer structure of 1 .…”
Section: Experimentally Observed Sipssupporting
confidence: 80%
“…The factor 1.2 is introduced to correct for the differences in the unit cell volumes of PFP 42 and DIP. 58 As it can be seen in Fig. 3 Table I.…”
Section: A Post Growth Xrr-measurementsmentioning
confidence: 84%
“…However, it is not easy to conclude from a rougher surface a higher l s directly, since the differences in r are relatively low compared to the differences observed for l s . Interestingly, no indications of lying-down DIP molecules or the low-temperature bulk crystal phase are observed at T sub ¼ 243 K, as is the case for pure DIP films at 233 K. 16 It is usually the case that either a high deposition rate or a low T sub should have a similar effect on the phase separation. At T sub ¼ 373 K, the influence of decreasing r dep by a factor of ten on D cohk of DIP is of the same order as increasing T sub from 303 K to 373 K. Nevertheless, decreasing the deposition rate at low substrate temperatures has a significantly smaller influence on l s than increasing T sub .…”
mentioning
confidence: 99%
“…11 DIP itself has a high exciton diffusion length, 12 exhibits ambipolar transport properties, 13 and its structural and morphological properties have been extensively studied. [14][15][16][17][18] C 60 is a commonly used acceptor material in OPV cells. [19][20][21] The two materials together form a prototypical system of phase-separating mixtures; this offers the opportunity for a detailed understanding of the fundamental aspects of such material pairs, in general.…”
mentioning
confidence: 99%