2002
DOI: 10.1063/1.1455149
|View full text |Cite
|
Sign up to set email alerts
|

Real-time x-ray scattering study on the thermal evolution of interface roughness in CoSi2 formation

Abstract: Long-term stability of a quasiperiodic Ta/Al multilayer: Disintegration at room temperature analyzed by grazing angle x-ray scattering and photoelectron spectroscopy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
4
0

Year Published

2002
2002
2012
2012

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 11 publications
(4 citation statements)
references
References 15 publications
0
4
0
Order By: Relevance
“…Cobalt silicides, having low electrical resistance, show many applications in gates, as a substitute for metallic contact and interconnect in ultra large-scale devices (ULSI) [1][2][3][4][5]. It is known to have three phases, Co 2 Si, CoSi and CoSi 2 and depending on the preparation method, thermal conditions and time used for thermal treatments, the relative amount of each silicide phase may vary.…”
Section: Introductionmentioning
confidence: 99%
“…Cobalt silicides, having low electrical resistance, show many applications in gates, as a substitute for metallic contact and interconnect in ultra large-scale devices (ULSI) [1][2][3][4][5]. It is known to have three phases, Co 2 Si, CoSi and CoSi 2 and depending on the preparation method, thermal conditions and time used for thermal treatments, the relative amount of each silicide phase may vary.…”
Section: Introductionmentioning
confidence: 99%
“…9 Previous investigations established that the silicide phase nucleates locally on structural defects of the Si surface during an exothermic reaction, this first step being followed by a self-ordered lateral growth. [10][11][12][13][14][15][16][17][18][19] Wang et al 20 reported the fabrication of micro/nanoscale pits with facile shape, orientation, and size controls on a Si surface via an Au-nanoparticles-assisted vapor transport method. The pit dimensions can be continuously tuned from 70 nm up to several lm.…”
mentioning
confidence: 99%
“…A combination of X-ray diffraction and reflectivity provides a powerful tool for characterizing the interfacial structure and the surface morphology of thin films [15,16]; the real-time synchrotron radiation measurements are especially useful [15,[17][18][19]. Here we describe the first result in an attempt to explore the lattice relaxation and the effective critical thickness in a short-period epitaxial BTO/LNO superlattice as a function of the number of stacking periods by in situ synchrotron X-ray scattering.…”
Section: Introductionmentioning
confidence: 96%