Realistic limits to computation

Cerofolini, G. F.

doi:10.1007/s00339-011-6724-2

Appl. Phys. A

2011

DOI: 10.1007/s00339-011-6724-2

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Realistic limits to computation

G. F. Cerofolini

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Cited by 2 publications

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“…Ideal voltage transformers, such as inductors, require that the transformation coefficient depends weakly on the load characteristics, and that energy losses are minimal. However, implementation of on-chip silicon based inductors turns out to be very difficult 23 , so that the seek for trade-off solutions in nanotransformers represents a great challenge in modern electronics. The contact configuration proposed in [5] suggests that the setup can be used as a voltage transformer at the nanoscale, contacting the EC bottom layer to another mesoscopic system with a known I-V characteristics, such as a quantum point contact (QPC), where I QP C = G 0 T 1 V B , with T 1 being the contact transparency (see inset of Fig.…”

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Nanotransformation and Current Fluctuations in Exciton Condensate Junctions

2012

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We analyze the nonlinear transport properties of a bilayer exciton condensate that is contacted by four metallic leads by calculating the full counting statistics of electron transport for arbitrary system parameters. Despite its formal similarity to a superconductor the transport properties of the exciton condensate turn out to be completely different. We recover the generic features of exciton condensates such as counterpropagating currents driven by excitonic Andreev reflections and make predictions for nonlinear transconductance between the layers as well as for the current (cross)correlations and generalized Johnson-Nyquist relationships. Finally, we explore the possibility of connecting another mesoscopic system (in our case a quantum point contact) to the bottom layer of the exciton condensate and show how the excitonic Andreev reflections can be used for transforming voltage at the nanoscale.PACS numbers: 71.35. Cc,72.70.+m, Transport in electronic bilayer systems has recently received increasing attention due to the possibility of observing the formation of quantum macroscopic order in these systems. Indeed, when an electron layer and a hole layer are separated by an insulating barrier that is sufficiently thick to prevent inter-layer tunneling but sufficiently thin to induce interlayer Coulomb interaction, an excitonic condensate (EC) is predicted to form. 1,2 Such condensate is a macroscopic quantum coherent state, in which electrons in one layer are bound to move coherently with holes in the other layer. These predictions have been confirmed in several experiments performed on GaAs quantum wells separated by an AlGaAs barrier, both in the quantum Hall regime at total filling factor ν = 1, see [3] and, more recently, also at zero magnetic field. 4 So far, most theoretical studies on transport properties in EC were concentrated on the linear response regime, 2,5 with a special focus on Coulomb drag configurations. 6 Other recent works have considered the case of EC contacted to superconducting electrodes, 7,8 whereas current fluctuation properties have only been addressed for systems where interlayer Coulomb interaction is present but is not strong enough to lead to condensation. 9 A remarkable advance in the field of EC is expected to arise from graphene bilayers. Such ECs are predicted to exhibit substantially higher critical temperature than ordinary semiconductor realizations, 5,10,11 due to the weaker screening and the higher electron and hole densities that can be achieved in graphene. Quite recently, systems of two graphene layers separated by a thin insulating boron nitride film have been realized, 12 and transport experiments in these systems may become a reality in the near future. In this paper we derive the full counting statistics (FCS) of an EC bilayer, providing its complete low-frequency transport characteristics. 13 This enables us to investigate not only the nonlinear conductance, but also the current noise and the higher current cumulants. To this purpose we shall adopt the model de...

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Nanotransformation and Current Fluctuations in Exciton Condensate Junctions

2012

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Polysilicon Nanowire Transistors and Arrays Fabricated With the Multispacer Technique

Jamaa

Cerofolini

Micheli

et al. 2011

IEEE Trans. Nanotechnology

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Abstract-In this paper, we demonstrate the ability of the multispacer patterning technique to yield layers of polycrystalline silicon nanowires with a sublithographic pitch, by exclusively using micrometer resolution andCMOS processing steps. We characterize single spacers operating as poly-Si nanowire field effect transistors . We demonstrate also the possibility to lay a spacer perpendicularly to a set of parallel spacers in a crossbar fashion. The extrapolated cross-point density from the small 4 × 1-array is in the range of 10 10 cm −2 . We discuss the applications of this technique to improve the density of previously reported poly-SiNW memories and as a future framework for nanowire crossbars and decoders. Then we analyze the limitations and costs of the proposed technique.

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Realistic limits to computation

Cited by 2 publications

References 79 publications

Nanotransformation and Current Fluctuations in Exciton Condensate Junctions

Nanotransformation and Current Fluctuations in Exciton Condensate Junctions

Polysilicon Nanowire Transistors and Arrays Fabricated With the Multispacer Technique

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