Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

Abstract

This paper presents a methodology to simulate the reverse characteristics of realistic 4H-SiC pn junctions. The physical bases behind methodology of the simulation have been analyzed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation.Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not needed in the calibration step.

Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

“…SiC p-n Junction Diode [6] The current state-of-the-art quality of SiC high power devices are still a distance away from the ideal state, partially due to the imperfect substrate quality and limited fabrication techniques. Moreover, the variety of defects in SiC wafers and their adverse influence on device performance needs to be captured adequately in simulators.…”

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

“…If the trap state is specified as CHARGED as in the case of donor state, then the following form of the Poisson equation can be used [6].…”