Realization and Characterization of CH₃NH₃PbI₃ /c-Si Heterojunction

Abstract

In the present work we have reported the realization and characterization of CH3NH3PbI3/c-Si heterojunction. It was achieved by deposing CH3NH3PbI3 perovskite film on (P) doped single crystalline Silicon (c-Si) substrate by spin coating. The structural, optical and electrical properties of perovskite film were investigated. The electric characterization of the realized device was achieved through I-V and G-f measurements. The recorded I-V characteristic exhibits a rectifier behavior. This curve was used also to determine diode parameters; the ideality factor, the saturation current, the series resistance and the potential barrier. However, the conductance method was used to assess the interface state Nss via (G/ω) versus angular frequency ω curve. The results were used to justify the large values of the ideality factor and the series resistance.