Realization of a self-powered Cu<sub>2</sub>O ozone gas sensor through the lateral photovoltaic effect

Huang, Chun‐Ying; He, Xin-Rong; Dai, Ting-Yu

doi:10.1039/d2tc03856k

Cited by 22 publications

(5 citation statements)

References 46 publications

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“…Further details of the experimental system can be found in the authors' previous publications. [32][33][34][35][36][37][38]…”

Section: Methodsmentioning

confidence: 99%

Photochemically-Activated p-Type CuGaO₂ Thin Films for Highly-Stable Room-Temperature Gas Sensors

Lin

et al. 2023

J. Electrochem. Soc.

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The photochemical activation process is a promising way to operate metal oxide gas sensors at room temperature. However, this technique is only used in n-type semiconductors. In this study, we report a highly stable p-type copper gallium oxide (CuGaO2) gas sensor fabricated through the facile sol-gel process. The sensor is capable of detecting O3 gas at room temperature, and its gas response can be further enhanced by ultraviolet (UV) activation. The highest gas response of 7.12 to 5 ppm O3 gas at a UV intensity of 10 mW/cm-2 is achieved at room temperature. In addition, the CuGaO2 sensor shows excellent long-term stability, with a degradation of approximately 3% over 90 days. These results strongly support the solution-processed CuGaO2 as a good candidate for room-temperature gas sensors.

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“…Further details of the experimental system can be found in the authors' previous publications. [32][33][34][35][36][37][38]…”

Section: Methodsmentioning

confidence: 99%

Photochemically-Activated p-Type CuGaO₂ Thin Films for Highly-Stable Room-Temperature Gas Sensors

Lin

et al. 2023

J. Electrochem. Soc.

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“…The sensor exhibits consistent reproducibility across multiple cycles. To evaluate the device performance of our devices, the gas response ( R ) is determined as follows: R = normalΔ I I = I 0 − I g I 0 , 0.25em 0.25em false( I 0 > I g false) …”

Section: Resultsmentioning

confidence: 99%

Self-Powered InGaZnO Ozone Gas Sensors Based on a Metal–Semiconductor–Metal Structure with Asymmetric Interdigitated Electrodes

Huang,

Juan,

Guo

et al. 2024

ACS Appl. Electron. Mater.

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Traditional semiconductor gas sensors have a single-plane electrode structure; therefore, an external bias voltage is needed to create an electric field to help carriers move within the sensing material. However, the importance of developing selfpowered gas sensors is gradually being recognized for their ability to offer energy-efficient and continuous gas monitoring, particularly in harsh environments. In this study, an amorphous InGaZnO (a-IGZO) gas sensor with asymmetric finger electrodes is developed for self-powered gas-sensing applications. By increasing the asymmetric ratio (the width of the positive electrode to the width of the negative electrode) of the Au interdigitated electrodes from 1 to 3, the gas response of the a-IGZO self-powered gas sensors significantly improved from approximately 0 to 60%. A theoretical model grounded in band energy theory is used to elucidate the underlying mechanism of the gas response observed at 0 V in our device. This strategy paves a facile way for monolithically fabricating a self-powered electronic nose with gas sensor arrays.

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“…Humidity has a significant impact on the stability of gas sensors, especially at room temperature. 2 In Fig. 11c, we present the dynamic response curves for two relative humidity (RH) levels, 37% and 75%.…”

Section: Resultsmentioning

confidence: 99%

“…This effect is attributed to the interaction of water molecules, which can replace the O 2 − molecules and release electrons. 2 These released electrons subsequently recombine with holes, resulting in an increase in baseline resistance as the RH level increases from 37% to 75%. Interestingly, the change in resistance occurs at a nearly consistent rate, as depicted in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…1 If the concentration of O 3 exceeds 100 ppb, it can cause shortness of breath, coughing, sore throat, and chest tightness. 2 In the last decade, metal oxide semiconductors (MOSs) have been used in gas sensors for detecting O 3 because they are highly sensitive, give a fast response and are stable. [3][4][5][6] There are also various solution-processed methods for synthesizing MOSs so cost is significantly reduced.…”

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confidence: 99%

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Effect of Ultraviolet Light on Mn₃O₄ Thin Films that are Grown Using SILAR for Room-Temperature Ozone Gas Sensors

Huang,

Chou,

Yang

et al. 2023

J. Electrochem. Soc.

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Successive ionic layer adsorption and reaction (SILAR) is a promising technique to fabricate gas sensors at room temperature. However, the quality of the films is poor, leading to reduced surface area and increased defects within the film structure, thus decreasing the overall gas response. Inferior film quality also negatively affects the stability and reproducibility of the gas sensors over time. This study determines the effect of UV treatment on the structural, morphological, and ozone (O3) gas-sensing properties of p-type Mn3O4 thin films. As UV treatment time increases, the O3 gas-sensing characteristics increase because a porous structure with a higher surface area is formed and electrical conductivity is increased. Under a UV intensity of 20 mW cm−2, the Mn3O4 sensor exhibits gas response, response time, and recovery time of 1.62, 58, and 39 s, respectively, against 5 ppm concentration of O3 gas. Moreover, the Mn3O4 gas sensor exhibits excellent long-term stability showing around 3% variation in gas response over 60 days. This strategy allows the deposition of high-quality p-type Mn3O4 thin films using SILAR for applications in flexible gas sensors.

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Realization of a self-powered Cu₂O ozone gas sensor through the lateral photovoltaic effect

Abstract: Photovoltaic self-powered gas sensors are generally based on the device structure of a p-n photodiode, which requires two different electrodes on opposite sides of a heterojunction. However, the complicated structure...

Cited by 22 publications

References 46 publications

Photochemically-Activated p-Type CuGaO₂ Thin Films for Highly-Stable Room-Temperature Gas Sensors

Photochemically-Activated p-Type CuGaO₂ Thin Films for Highly-Stable Room-Temperature Gas Sensors

Self-Powered InGaZnO Ozone Gas Sensors Based on a Metal–Semiconductor–Metal Structure with Asymmetric Interdigitated Electrodes

Effect of Ultraviolet Light on Mn₃O₄ Thin Films that are Grown Using SILAR for Room-Temperature Ozone Gas Sensors

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Realization of a self-powered Cu2O ozone gas sensor through the lateral photovoltaic effect

Abstract: Photovoltaic self-powered gas sensors are generally based on the device structure of a p-n photodiode, which requires two different electrodes on opposite sides of a heterojunction. However, the complicated structure...

Cited by 22 publications

References 46 publications

Photochemically-Activated p-Type CuGaO2 Thin Films for Highly-Stable Room-Temperature Gas Sensors

Photochemically-Activated p-Type CuGaO2 Thin Films for Highly-Stable Room-Temperature Gas Sensors

Self-Powered InGaZnO Ozone Gas Sensors Based on a Metal–Semiconductor–Metal Structure with Asymmetric Interdigitated Electrodes

Effect of Ultraviolet Light on Mn3O4 Thin Films that are Grown Using SILAR for Room-Temperature Ozone Gas Sensors

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Product

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Realization of a self-powered Cu₂O ozone gas sensor through the lateral photovoltaic effect

Photochemically-Activated p-Type CuGaO₂ Thin Films for Highly-Stable Room-Temperature Gas Sensors

Photochemically-Activated p-Type CuGaO₂ Thin Films for Highly-Stable Room-Temperature Gas Sensors

Effect of Ultraviolet Light on Mn₃O₄ Thin Films that are Grown Using SILAR for Room-Temperature Ozone Gas Sensors