2014
DOI: 10.1039/c4tc01839g
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Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes

Abstract: We demonstrate a novel type of ZnO self-powered photodetector based on the asymmetric metalsemiconductor-metal (MSM) structure: one Au interdigitated electrode with wide fingers and the other one with narrow fingers. These ZnO photodetectors exhibit attractive photovoltaic characteristics at 0 V bias. More interestingly, with increasing the asymmetric ratio (the width of wide fingers : the width of narrow fingers) of the interdigitated electrodes, the responsivity of the ZnO self-powered UV photodetectors was … Show more

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Cited by 194 publications
(121 citation statements)
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“…Thanks to the continuous innovations in semiconductor technology, various wide‐bandgap materials such as diamond, ZnO, TiO 2 , ZnS, etc., have drawn great attention in the field of UV PDs . Among them, SnO 2 , a conventional metal oxide with a direct bandgap, is generally regarded as a n‐type material in its undoped form because of the intrinsic defects.…”
Section: The Characteristic Parameters Of Sno2‐based Uv Pds In the LImentioning
confidence: 99%
“…Thanks to the continuous innovations in semiconductor technology, various wide‐bandgap materials such as diamond, ZnO, TiO 2 , ZnS, etc., have drawn great attention in the field of UV PDs . Among them, SnO 2 , a conventional metal oxide with a direct bandgap, is generally regarded as a n‐type material in its undoped form because of the intrinsic defects.…”
Section: The Characteristic Parameters Of Sno2‐based Uv Pds In the LImentioning
confidence: 99%
“…In addition, self‐powered photodetection achieved by traditional photovoltaic devices in terms of p–n junctions, heterojunctions, and Schottky junctions is another alternative stratagem. These kinds of devices could separate photogenerated electron–hole pairs by built‐in electric field, which could transform UV radiation into electrical energy directly . However, they possess many urgent issues to be resolved, such as realizing high quality and stable p–n homojunctions (heterojunctions) as well as modifing the poor electrode contacts in vertical Schottky photodiodes.…”
mentioning
confidence: 99%
“…6 demonstrates the structure of the realized rGO/ZnO photodetector (part (a)) and the operation mechanism of the device (part (b)), when exposed to illumination. It is known that surface processes in optoelectronic devices based on ZnO nanostructures play a crucial role because of large surface-to-volume ratios [46][47][48][49][50]. It can be observed in Fig.…”
Section: Output Behavior Of Rgo/zno Based Msm Photodetectormentioning
confidence: 57%
“…The concept of "self-powered devices" is powering electrical devices without the need for batteries. During the last few years, there are some reports which have utilized ZnO to realize self-powered photodetectors [21,22,49,50].…”
Section: Realization Of Rgo/zno Based Self-powered Photodetectormentioning
confidence: 99%