Realization of a tunable surface Dirac gap in Sb-doped 
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Ma, Xiaoming; Zhao, Yufei; Zhang, Ke; Kumar, Shiv; Lu, Ruie; Li, Jiayu; Yao, Qiushi; Shao, Jifeng; Hou, Fuchen; Wu, Xuefeng; Zeng, Meng; Hao, Yu‐Jie; Hao, Zhanyang; Wang, Yuan; Liu, Xiang-Rui; Shen, Huiwen; Sun, Hongyi; Mei, Jia-Wei; Miyamoto, Koji; Okuda, Takashi; Arita, Masashi; Schwier, Eike F.; Shimada, Kenya; Deng, Ke; Liu, Cai; Lin, Junhao; Zhao, Yüe; Chen, Chao‐Yu; Liu, Qihang; Liu, Chang

doi:10.1103/physrevb.103.l121112

Cited by 33 publications

(18 citation statements)

References 73 publications

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“…Furthermore, from previous studies in the literature their dispersions remain the same within experimental uncertainties when the photon energy is substantially increased to > 20 eV [26]. Our observations are in good agreement with previous photon-energy-dependent measurements in the literature [26,29], implying 2D characters for the "S 1 " and "S 2 " bands.…”

Section: Resultssupporting

confidence: 92%

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Yan,

Fernandez-Mulligan,

Mei

et al. 2021

Preprint

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Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi2Te4, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi2Te4 via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well reproduced in a band hybridization model. A numerical simulation of energy-momentum dispersions based on a four-band model with an additional step potential near the surface provides a promising explanation for the origin of the quasi-2D bands. Our study represents a solid step forward in reconciling the existing controversies in the electronic structure of MnBi2Te4, and provides an important framework to understand the electronic structures of other relevant topological materials MnBi2nTe3n+1.

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Section: Resultssupporting

confidence: 92%

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Yan,

Fernandez-Mulligan,

Mei

et al. 2021

Preprint

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“…Thus, the LMR in our observation can be a remarkable transport signature of the highmobility topological surface states, similar to previous studies of LMR in non-magnetic TIs [41,42]. The existence of the topological surface states in Sb doped MnBi 2 Te 4 is consistent with the first-principles calculations [28], the scanning tunneling spectroscopy [26] and ARPES results [43]. Positive LMR was ever observed in MnBi 2 Te 4 flakes, but its physical origin is not clear.…”

Section: Resultssupporting

confidence: 91%

Topological driven linear magnetoresistance in Sb-doped MnBi₂Te₄

Zhong

Tang

et al. 2023

J. Phys. D: Appl. Phys.

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Linear magnetoresistance (LMR) is an attractive phenomenon showing potential in uncovering novel physics and gauss sensor applications. Here we report a Fermi-level-sensitive LMR by doping Sb into antiferromagnetic topological insulator (AFM TI) MnBi2Te4 crystals. The LMR is most remarkable when the Fermi level is close to the charge neutral point (CNP) and the bulk carriers are largely suppressed. Our detailed analyses reveal that the slope of the LMR shows linear dependence on the inverse of carrier density. The results are quantitatively consistent with the quantum LMR model based on the surface state of a TI and thus reveal a transport signature of the topological surface state. Our work provides crucial insights into understanding of the essential MR behavior and surface state in MnBi2Te4.

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“…Type I originates from the typical surface magnetization that introduces a term to a gapless Dirac fermion, exemplified by the (001) surface of MnBi 2 Te 4 , and the MnBi 2 Te 4 termination of MnBi 2 Te 4 /(Bi 2 Te 3 ) n . Although the surface states of MnBi 2 Te 4 are reported to be gapless due to the possible reconstruction of the geometric or magnetic configurations at the surface 60 – 62 , there are still unambiguous surface gaps observed in various conditions, including Sb-doped MnBi 2 Te 4 and the MnBi 2 Te 4 termination of MnBi 8 Te 13 21 , 63 , 64 . Type II, on the other hand, is caused by the hybridization effect between the Dirac cone and the bulk valence band, exemplified by the Bi 2 Te 3 termination of MnBi 4 Te 7 65 .…”

Section: Discussionmentioning

confidence: 99%

Spectral signatures of the surface anomalous Hall effect in magnetic axion insulators

Sun

et al. 2021

Nat Commun

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The topological surface states of magnetic topological systems, such as Weyl semimetals and axion insulators, are associated with unconventional transport properties such as nonzero or half-quantized surface anomalous Hall effect. Here we study the surface anomalous Hall effect and its spectral signatures in different magnetic topological phases using both model Hamiltonian and first-principles calculations. We demonstrate that by tailoring the magnetization and interlayer electron hopping, a rich three-dimensional topological phase diagram can be established, including three types of topologically distinct insulating phases bridged by Weyl semimetals, and can be directly mapped to realistic materials such as MnBi2Te4/(Bi2Te3)n systems. Among them, we find that the surface anomalous Hall conductivity in the axion-insulator phase is a well-localized quantity either saturated at or oscillating around e2/2h, depending on the magnetic homogeneity. We also discuss the resultant chiral hinge modes embedded inside the side surface bands as the potential experimental signatures for transport measurements. Our study is a significant step forward towards the direct realization of the long-sought axion insulators in realistic material systems.

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Realization of a tunable surface Dirac gap in Sb-doped MnBi2Te4

Cited by 33 publications

References 73 publications

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Topological driven linear magnetoresistance in Sb-doped MnBi₂Te₄

Spectral signatures of the surface anomalous Hall effect in magnetic axion insulators

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Realization of a tunable surface Dirac gap in Sb-doped MnBi2Te4

Cited by 33 publications

References 73 publications

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Topological driven linear magnetoresistance in Sb-doped MnBi2Te4

Spectral signatures of the surface anomalous Hall effect in magnetic axion insulators

Contact Info

Product

Resources

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Topological driven linear magnetoresistance in Sb-doped MnBi₂Te₄