Realization of axially defined GaInP/InP/InAsP triple-junction photovoltaic nanowires for high-performance solar cells

Hrachowina, Lukas; Chen, Yang; Barrigón, Enrique; Wallenberg, Reine; Borgström, Magnus T.

doi:10.1016/j.mtener.2022.101050

Cited by 19 publications

(14 citation statements)

References 37 publications

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“…Moreover, the quantum confinement effect in inorganic perovskite nanowires can also greatly reduce the recombination of carriers and extend the carrier lifetime. [ 39–58 ] Figure S6d, Supporting Information, compares the XRD patterns for CsSnI 3 NW arrays and thin film samples. The typical characteristic peaks of CsSnI 3 NW arrays have a narrow FWHM with large peak intensity in XRD spectra.…”

Section: Resultsmentioning

confidence: 99%

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Single‐Crystal Nanowire Cesium Tin Triiodide Perovskite Solar Cell

Dai

Cabarrocas

Ban

et al. 2023

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This work reports for the first time a highly efficient single‐crystal cesium tin triiodide (CsSnI3) perovskite nanowire solar cell. With a perfect lattice structure, low carrier trap density (≈5 × 1010 cm−3), long carrier lifetime (46.7 ns), and excellent carrier mobility (>600 cm2 V−1 s−1), single‐crystal CsSnI3 perovskite nanowires enable a very attractive feature for flexible perovskite photovoltaics to power active micro‐scale electronic devices. Using CsSnI3 single‐crystal nanowire in conjunction with highly conductive wide bandgap semiconductors as front‐surface‐field layers, an unprecedented efficiency of 11.7% under AM 1.5G illumination is achieved. This work demonstrates the feasibility of all‐inorganic tin‐based perovskite solar cells via crystallinity and device‐structure improvement for the high‐performance, and thus paves the way for the energy supply to flexible wearable devices in the future.

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Section: Resultsmentioning

confidence: 99%

“…Based on the above knowledge and experience, we are optimistic about the perspective of flexible CsSnI 3 perovskite nanowire devices by referring to the published research results of flexible solar cells based on silicon nanowires [ 46–49 ] and III–V nanowires. [ 50–53 ]…”

Section: Introductionmentioning

confidence: 99%

Single‐Crystal Nanowire Cesium Tin Triiodide Perovskite Solar Cell

Dai

Cabarrocas

Ban

et al. 2023

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“…In particular, the reduced susceptibility to radiation damage observed for NW structures in theoretical as well as experimental studies is only relevant as long as all the active components are located within the NW. , Given that photovoltaic devices for space are an important scenario of application for III–V NW array devices, this motivates the development of NW multijunction photovoltaics with multiple p–n junctions located within a NW. Previous work in our group has established parameters for the growth of axially defined GaInP/InP double-junction as well as GaInP/InP/InAsP triple-junction photovoltaic NWs, which were grown in arrays but evaluated as single NWs. , Please note that these combinations of materials would not be possible using planar layers but are enabled by radial strain relaxation via the free surface of the NWs. , In this paper, we report on the processing of GaInP/InP tandem-junction NW arrays into fully functional photovoltaic devices, contacting approximately 3 million NWs in parallel on each 800 × 800 μm 2 -sized device. By changing the Ga x In 1– x P composition x between samples, we aim to understand the influence of the top cell composition on device performance.…”

Section: Introductionmentioning

confidence: 99%

Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells

Alcer,

Tirrito,

Hrachowina

et al. 2024

ACS Appl. Nano Mater.

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We present vertically processed photovoltaic devices based on GaInP/ InP tandem-junction III−V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandemjunction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I−V measurements under AM1.5G illumination confirm voltage addition of the subcells, resulting in an open-circuit voltage of up to 1.91 V. However, the short-circuit current density is low, ranging between 0.24 and 3.44 mA/cm 2 , which leads to a resulting solar conversion efficiency of up to 3.60%. Our work shows a path forward toward high-efficiency NW photovoltaics and identifies critical issues that need improvement.

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“…Semiconductor nanowires (NWs) play a major role in intriguing technological applications in the field of high-performance nanoelectronics [ 1 ], photovoltaics [ 2 ], photonics [ 3 ], thermoelectrics [ 4 , 5 ], chemical energy storage [ 6 ], and biomedicine [ 7 ]. Different aspects of semiconductor NW research have been reviewed and the fundamental growth, structure, and property relations have been described [ 8 , 9 , 10 , 11 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor

et al. 2023

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Si1−xGex nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si–Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associated with the control of decomposition characteristics and the dosing of individual precursors. The group IV alloy NWs are single crystalline with a constant diameter along their axis. During the wire growth by low pressure CVD, an Au-containing surface layer on the NWs forms by surface diffusion from the substrate, which can be removed by a combination of oxidation and etching. The electrical properties of the Si1−xGex/Au core-shell NWs are compared to the Si1−xGex NWs after Au removal. Core–shell NWs show signatures of metal-like behavior, while the purely semiconducting NWs reveal typical signatures of intrinsic Si1−xGex. The synthesized materials should be of high interest for applications in nano- and quantum-electronics.

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Realization of axially defined GaInP/InP/InAsP triple-junction photovoltaic nanowires for high-performance solar cells

Cited by 19 publications

References 37 publications

Single‐Crystal Nanowire Cesium Tin Triiodide Perovskite Solar Cell

Single‐Crystal Nanowire Cesium Tin Triiodide Perovskite Solar Cell

Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells

Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor

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