Realization of Boolean Logic Functionality Using Redox‐Based Memristive Devices

Abstract

Emerging resistively switching devices are thought to enable ultradense passive nanocrossbar arrays for use as random access memories (ReRAM) by the end of the decade, both for embedded and mass storage applications. Moreover, ReRAMs offer inherent logic‐in‐memory (LIM) capabilities due to the nonvolatility of the devices and therefore great potential to reduce the communication between memory and calculation unit by alleviating the so‐called von Neumann bottleneck. A single bipolar resistive switching device is capable of performing 14 of 16 two input logic functions in the logic concept presented by Linn et al. (“CRS‐logic”). In this paper, five types of selectorless devices are considered to validate this CRS‐logic concept is experimentally by means of the IMP and AND logic operations. As reference device a TaO x ‐based ReRAM cell is considered, which is compared to three more advanced device configurations consisting either of a threshold supported resistive switch (TS‐ReRAM), a complementary switching device (CS), or a complementary resistive switch (CRS). It is shown that all of these devices offer the desired LIM behavior. Moreover, the feasibility of XOR and XNOR operations using a modified logic concept is applied for both CS and CRS devices and the pros and cons are discussed.

A HfO2‐Based Complementary Switching Crossbar Adder

“…Hence, we explain briefl y the CRS-logic concept introduced by Linn et al, [ 5 ] which has been recently demonstrated for different devices. [ 30 ] By using this logic concept, a single bipolar switching device is capable to perform 14 out of 16 Boolean functions. The remaining two operations XOR and XNOR can be realized by two devices.…”

Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model

“…It might even be increased by stacking multiple layers of passive matrices to a 3D structure. [7][8][9][10][11][12][13][14][15][16][17][18] Threshold devices show an abrupt resistance change at a certain voltage stress V Th,ON . [ 1,4 ] This serious issue is alleviated by either complementary resistive switching devices or by the integration of a selector device in addition to the passive ReRAM, so called "1S1R" structures.…”

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

“…These two stable states of the device are sufficient for its application as a non-volatile memory, also denominated resistive random access memory (RRAM), and logic devices [5,6].…”