Realization of forming-free Ag/ZrO2-based threshold selector with high selectivity by optimizing film thickness and scaling down electrode size

Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

“…For CBRAM cells, nonvolatility is important for attaining stable memory switching characteristics. However, as reported in recent research studies, an exceptional phenomenon called electrochemical metallization (ECM) comprises volatile threshold switching that occurs under low compliance current operation. ,, Volatile threshold switching is a phenomenon in which resistance change occurs from a high-resistance state (HRS) to a low-resistance state (LRS) by the applied voltage upon the threshold and returns to the HRS without any reset process. This occurs because of the metallic filament’s easily dissoluble nature to minimize its interfacial energy − and has been observed in several materials. − ECM threshold switches have gained significant interest because of their unique volatile threshold switching properties while also maintaining several merits of the CBRAMs, such as great scalability, a high ON/OFF ratio, and great compatibility with CMOS technology.…”

“…However, as reported in recent research studies, an exceptional phenomenon called electrochemical metallization (ECM) comprises volatile threshold switching that occurs under low compliance current operation. ,, Volatile threshold switching is a phenomenon in which resistance change occurs from a high-resistance state (HRS) to a low-resistance state (LRS) by the applied voltage upon the threshold and returns to the HRS without any reset process. This occurs because of the metallic filament’s easily dissoluble nature to minimize its interfacial energy − and has been observed in several materials. − ECM threshold switches have gained significant interest because of their unique volatile threshold switching properties while also maintaining several merits of the CBRAMs, such as great scalability, a high ON/OFF ratio, and great compatibility with CMOS technology. ECM threshold switches can be used for enhancing the subthreshold slope of the conventional MOS field effect transistor , and are spotlighted as a selector device for a crossbar memory array, which is necessary for increasing the memory array size. − Additionally, the application to the artificial synaptic device, which mimics synapses found in the human brain, has great potential for neuromorphic computing research studies. , However, the unreliable set operation for an ECM threshold switch, due to its inherent filament randomness, is a problem that hinders extension of its application.…”

“…This occurs because of the metallic filament’s easily dissoluble nature to minimize its interfacial energy − and has been observed in several materials. − ECM threshold switches have gained significant interest because of their unique volatile threshold switching properties while also maintaining several merits of the CBRAMs, such as great scalability, a high ON/OFF ratio, and great compatibility with CMOS technology. ECM threshold switches can be used for enhancing the subthreshold slope of the conventional MOS field effect transistor , and are spotlighted as a selector device for a crossbar memory array, which is necessary for increasing the memory array size. − Additionally, the application to the artificial synaptic device, which mimics synapses found in the human brain, has great potential for neuromorphic computing research studies. , However, the unreliable set operation for an ECM threshold switch, due to its inherent filament randomness, is a problem that hinders extension of its application. Several researchers have focused on identifying the nature of the filament; ,, there remains a need for detailed studies about the regulation of filament randomness to attain high reliability.…”

“…However, as reported in recent research studies, an exceptional phenomenon called electrochemical metallization (ECM) comprises volatile threshold switching that occurs under low compliance current operation. 16,17,26 Volatile threshold switching is a phenomenon in which resistance change occurs from a high-resistance state (HRS) to a low-resistance state (LRS) by the applied voltage upon the threshold and returns to the HRS without any reset process. This occurs because of the metallic filament's easily dissoluble nature to minimize its interfacial energy 18−20 and has been observed in several materials.…”