Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer

Chen, Jiamin; Liu, Jiangwei; Sakuraba, Yuya; Sukegawa, Hiroaki; Li, S.; Hono, K.

doi:10.1063/1.4950827

Cited by 13 publications

(8 citation statements)

References 24 publications

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“…The rest of the excess Ge accumulated at the top surface of the NiAl, as shown in figure 7. Similar diffusion has also been observed with NiAl growth on Si [15]. There, the Si was found to have diffused through a NiAl(50 nm)/Ag(50 nm) bilayer and accumulated on the top Ag surface.…”

Section: Discussionsupporting

confidence: 74%

“…30 nm of NiAl was deposited with a substrate temperature of either 200 • C or 400 • C. For each substrate temperature, there were two wafers, one with and one without native oxide removal. The hypothesis was that NiAl growth on Ge is analogous to growth on Si [10,15] i.e. epitaxial growth when deposition is done at 400 • C on an oxide-free substrate.…”

Section: Methodsmentioning

confidence: 99%

“…MgAl 2 O 4 [11,12] and Heusler alloys [13,14]. In fact, a pseudo spin-valve structure using a Heusler alloy has been made on a Si wafer buffered by epitaxial NiAl [15].…”

Section: Introductionmentioning

confidence: 99%

“…Fe, Cr, and MgO, having a lattice mismatch of −1.3%, −0.03% and 3.4%, respectively. When NiAl is deposited at a substrate temperature of around 400 • C on Si (001), the growth is found to be epitaxial with NiAl (001)//Si (001) [10,15]. NiAl has a significant lattice mismatch of 6% with Si, while with Ge it is 2% where two NiAl unit cells fit on one Si/Ge unit cell.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx

Ben Chroud,

Korytov,

Soulié

et al. 2024

J. Phys. D: Appl. Phys.

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In this work, the growth of a magnetron sputtered NiAl film on Ge was investigated. Two growth parameters were varied: the deposition temperature and the presence of native GeOx. An epitaxial layer was obtained at a deposition temperature of 400℃ and without removal of the native GeOx prior to deposition. At this growth condition, Ni and Al diffused into the Ge forming an epitaxial germanide. This germanide is most likely the τ3 phase of the Ni-Al-Ge ternary system. The growth of the τ3 phase is enabled by the GeOx acting as a diffusion barrier for Al. The native GeOx was found to be amorphous and to contain holes through which the NiAl can directly contact the τ3 germanide and grow epitaxially. These holes are likely formed by thermal degradation when the substrate is heated for deposition. The electrical resistivity for epitaxial NiAl was found to be 13 μΩ.cm at a thickness of 30 nm which was the lowest value of the tested conditions. Epitaxial NiAl can be used as a seed layer to grow other layers epitaxially in a CMOS-compatible process, e.g. Fe(Co), Cr, MgO, and Heusler alloys.

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Section: Discussionsupporting

confidence: 74%

Section: Methodsmentioning

confidence: 99%

“…MgAl 2 O 4 [11,12] and Heusler alloys [13,14]. In fact, a pseudo spin-valve structure using a Heusler alloy has been made on a Si wafer buffered by epitaxial NiAl [15].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx

Ben Chroud,

Korytov,

Soulié

et al. 2024

J. Phys. D: Appl. Phys.

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“…The compositions and the RHEED patterns suggested the NiAl (MnGa) had a B2 (L1 0 ) structure. 24,25) Figure 1(b) shows the polar Kerr signal for the fabricated structures as a function of the out-of-plane magnetic field at room temperature. The structure without a MnGa layer showed almost no dependence on the magnetic field, which indicated that the NiAl buffer layer was nonmagnetic at room temperature.…”

mentioning

confidence: 99%

Interaction between spin–orbit torque and domain walls in a Ta/MnGa/NiAl structure

Yamanouchi

Bao

Inoue

et al. 2019

Jpn. J. Appl. Phys.

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We investigate the interaction between spin-orbit torque (SOT) and domain walls (DWs) created during magnetization reversal in perpendicularly magnetized ultrathin MnGa sandwiched between Ta and NiAl. We examine the out-of-plane hysteresis loops under various in-plane magnetic fields H x s along the current I direction by using magnetotransport measurements. The applied I acts as an effective perpendicular magnetic field H eff on magnetization under H x . The slope of H eff versus I varies proportionally to H x and becomes saturated above ∼0.15 T, which is consistent with a model based on magnetization reversal through SOT-assisted chiral DW motion under H x .

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