2020
DOI: 10.1016/j.jlumin.2020.117208
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Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation

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Cited by 6 publications
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“…The former method involves strategies based on the size reduction of bulk materials under the influence of a beam [ 12 ] ( Figure 2 ). Techniques such as ion beam implantation, electron beam lithography, molecular beam epitaxy, and x-ray lithography are included in this first category [ 13 ] and allow us to synthesize nanoparticles of InGaAs/GaAs [ 14 ], InGaN/GaN [ 15 ], among others. In a typical lithographic process, the QDs are deposited onto a silicon substrate coated with gold, to further draw a pattern by lithography over the QDs layer.…”
Section: Synthesis Of Ternary Quantum Dotsmentioning
confidence: 99%
“…The former method involves strategies based on the size reduction of bulk materials under the influence of a beam [ 12 ] ( Figure 2 ). Techniques such as ion beam implantation, electron beam lithography, molecular beam epitaxy, and x-ray lithography are included in this first category [ 13 ] and allow us to synthesize nanoparticles of InGaAs/GaAs [ 14 ], InGaN/GaN [ 15 ], among others. In a typical lithographic process, the QDs are deposited onto a silicon substrate coated with gold, to further draw a pattern by lithography over the QDs layer.…”
Section: Synthesis Of Ternary Quantum Dotsmentioning
confidence: 99%