Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

Kim, Kyoung-Kook; Kim, Hyun-Sik; Hwang, Dae‐Kue; Lim, Jae‐Hong; Park, Seong-Ju

doi:10.1063/1.1591064

Cited by 617 publications

(220 citation statements)

References 17 publications

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“…The main objective of synthesis is to produce particles only in nanorod structure for various toxicity and biological application studies. There are different doping agents like P [27], N [28], As [29], Li [30], Sb [31][32][33][34], and Ag [35]. Among these, we have taken Ag as doping agent.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Silver-Doped Zinc Oxide Nanocomposite by Pulse Mode Ultrasonication and Its Characterization Studies

Vijayakumar

Karthikeyeni

Vasanth

et al. 2013

Journal of Nanoscience

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The synthesis of silver-doped zinc oxide (Ag:ZnO) nanocomposite material was achieved using a simple chemical coprecipitation method, in which 0.2 M zinc chloride and 0.001 M silver nitrate coprecipitated with 25% ammonia solution by pulse mode dispersion using ultrasonicator. The obtained silvery white precipitate was dried overnight at 110 ∘ C in hot air oven, and the powder was collected. The resulted Ag:ZnO nanocomposite was structurally and optically characterized using various techniques. The Xray diffraction (XRD) pattern clearly showed the presence of crystalline Ag:ZnO particles. Further, UV-Vis spectrophotometer and fourier transform infrared spectroscopy (FT-IR) results showed the presence of Ag:ZnO nanocomposite at specific wavelengths. The scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis confirm that the synthesized Ag:ZnO nanocomposite material was truncated nanorod in shape and has 48 to 226 nm size in diameter.

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Section: Introductionmentioning

confidence: 99%

Synthesis of Silver-Doped Zinc Oxide Nanocomposite by Pulse Mode Ultrasonication and Its Characterization Studies

Vijayakumar

Karthikeyeni

Vasanth

et al. 2013

Journal of Nanoscience

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“…Experimentally, successful realization of p-type ZnO has been reported using N [42], which is reasonable since nitrogen has a similar ionic radius as oxygen thus making it easily substitutable. P-type doping has also been achieved using P, Sb and As [43,44,45] and these elements might be, beside N, the most promising ones for realizing p-type conductivity. However, despite these promising reports, the major challenge still remains namely, the development of a reliable method to produce Chapter 3…”

Section: -Point Defects and Impurities In Znomentioning

confidence: 99%

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Schifano¹,

Monakhov²,

Großner³

et al. 2007

Applied Physics Letters

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The formation of Schottky barrier contacts to hydrogen peroxide treated ZnO has been investigated. Low resistivity hydrothermally grown single crystal ZnO wafers of n-type were used. Pd contacts deposited on organic solvent cleaned O face (0001¯) showed Ohmic behavior, while on the H2O2 treated O face up to nine orders of magnitude in rectification of the current was obtained for biases of −2 and +2V. Concurrently, the surface roughness increases from 1.0±0.5 up to 2.0±0.5nm due to the H2O2 treatment. A majority of the contacs deposited were stable or improved their performance by annealing in air at 200°C for 30min. However, the contacts both before and after the annealing exhibited ideality factors of at least ∼1.8 at +0.5V suggesting that the current transport cannot be described as purely thermionic. Finally, results of capacitance versus voltage and capacitance versus temperature measurements are discussed and show a dominant electron state at ∼0.32eV below the conduction band edge.

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“…ZnO is a well known n-type semiconductor material, this n-type conductivity further increased by dopants like In (Pati et al 2015), Ga (Chin et al 2016), Al (Kumar et al 2014), etc. It is also possible to produce p-type ZnO by doping Bi (Sadananda et al 2013), As (Ryu et al 2000), P (Kim et al 2003), etc. Optical band gap of ZnO can be widened by alloying with Mg, which can reach up to 4.5 eV (Takagi et al 2003).…”

Section: Introductionmentioning

confidence: 99%

Effect of cadmium incorporation on the properties of zinc oxide thin films

Bharath

Bangera

Shivakumar³

2018

Appl Nanosci

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Cd x Zn 1−x O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd x Zn 1−x O thin films are subjected to annealing. Both the as-deposited and annealed Cd x Zn 1−x O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd x Zn 1−x O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd x Zn 1−x O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for Cd x Zn 1−x O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.

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Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

Cited by 617 publications

References 17 publications

Synthesis of Silver-Doped Zinc Oxide Nanocomposite by Pulse Mode Ultrasonication and Its Characterization Studies

Synthesis of Silver-Doped Zinc Oxide Nanocomposite by Pulse Mode Ultrasonication and Its Characterization Studies

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Effect of cadmium incorporation on the properties of zinc oxide thin films

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