2001
DOI: 10.1016/s0924-4247(00)00506-9
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Realization of polycrystalline silicon magnetic sensors

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Cited by 26 publications
(10 citation statements)
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“…The influence of n does not appear when ‫ץ‬V H /‫ץ‬B is written using V instead of I except the influence through . Actually, the difference between ‫ץ‬V H /‫ץ‬B Ϸ 20 mV/T in the previous article 17 and ‫ץ‬V H /‫ץ‬B Ϸ 70 V/T in this research can quantitatively be explained using W/L = 200/200 m = 1 and V Ϸ 10 V in the previous article and W = 10/40 m = 0.25 and V = 0.1 V in this research, respectively. It is surely preferable to improve the magnetic sensitivity.…”
Section: Discussionmentioning
confidence: 46%
See 1 more Smart Citation
“…The influence of n does not appear when ‫ץ‬V H /‫ץ‬B is written using V instead of I except the influence through . Actually, the difference between ‫ץ‬V H /‫ץ‬B Ϸ 20 mV/T in the previous article 17 and ‫ץ‬V H /‫ץ‬B Ϸ 70 V/T in this research can quantitatively be explained using W/L = 200/200 m = 1 and V Ϸ 10 V in the previous article and W = 10/40 m = 0.25 and V = 0.1 V in this research, respectively. It is surely preferable to improve the magnetic sensitivity.…”
Section: Discussionmentioning
confidence: 46%
“…However, only magnetic field where a sensing device is located can be detected using the conventional magnetic sensors. Therefore, a magnetic sensor using poly-Si Hall cells has recently been proposed, 17 which can be applied to area sensors because they can be fabricated on large substrates at low cost with some amplifying circuits and operating units integrated using poly-Si TFTs as written above. However, some important performances such as characteristic deviation have not yet been sufficiently analyzed, which is a critical issue to apply them to magnetic sensors.…”
mentioning
confidence: 99%
“…Polycrystalline Hall sensors have been reported with a sensitivity of 19 mV/T [18], or a plasma as sensitive material, resulting in a 10 mV/Gauss sensitivity [19]. Polycrystalline Hall sensors have been reported with a sensitivity of 19 mV/T [18], or a plasma as sensitive material, resulting in a 10 mV/Gauss sensitivity [19].…”
Section: Hall Plate Sensorsmentioning
confidence: 99%
“…7) Moreover, thin-film devices have been lately employed for various kinds of sensor applications. [8][9][10][11] Recently, we have found that -IGZO TFTs exposed to ozone annealing and fabricated under high oxygen pressure have an interesting property; 12) the Ids-Vgs characteristic shifts positively and becomes steep when gate voltage is applied, whereas it recovers the initial one with a small threshold voltage and a large subthreshold swing upon light illumination. This is because excess oxygen generates trap states in the energy gap; these turn to deep Gaussian states owing to the structural relaxation of the charged states when the gate voltage is applied, whereas these return to shallow flat states owing to the carrier detrapping by the photoexcitation when the light is irradiated.…”
Section: Introductionmentioning
confidence: 99%