2024
DOI: 10.1063/5.0197172
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Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

Tianshun Xie,
Mengnan Ke,
Keiji Ueno
et al.

Abstract: Significant recent progress has been achieved in the fabrication of tunnel field-effect transistors (TFETs) utilizing transition metal dichalcogenides (TMDCs) materials, particularly focusing on out-of-plane heterojunction structures. Due to the inherent limitations of doping technology for TMDCs, there have been limited investigations into the development of in-plane TFETs. In this study, we present the realization of an in-plane TFET based on a single crystal of multilayer MoTe2, utilizing a regioselective d… Show more

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