Realizing Bi-doped α-Cu2Se as a promising near-room-temperature thermoelectric material

Liao, Wang-Wei; Yang, Lei; Chen, Jie; Zhou, Di; Qu, Xianlin; Zheng, Kun; Han, Guang; Zhou, Jiabei; Hong, Min; Chen, Zhigang

doi:10.1016/j.cej.2019.04.081

Cited by 50 publications

(36 citation statements)

References 58 publications

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“…On the contrary, introducing additional Cu or Na can reduce n H by reducing VECs. Small amount of Bi doping on Cu site can reduce n H . Meanwhile, further increasing Bi doping level can increase n H due to bond softening …”

Section: Strategies For the Thermoelectric Property Enhancementmentioning

confidence: 99%

“…Small amount of Bi doping on Cu site can reduce n H . Meanwhile, further increasing Bi doping level can increase n H due to bond softening …”

Section: Strategies For the Thermoelectric Property Enhancementmentioning

confidence: 99%

“…Generally, κ b has only limited influence of the thermoelectric performance, if thermoelectric materials do not show obvious turn point of temperature‐dependent S . Hence, κ l can be estimated by subtracting κ e from κ. κ e = LσT is directly related with σ, where L is the Lorenz factor . Meanwhile, σ = n⋅e⋅μ is dominated by the carrier transport properties, including carrier concentration ( n , denoted as n H for holes of p‐type semiconductors and n e for electrons of n‐type semiconductors) and carrier mobility ( μ , denoted as μ H for holes of p‐type semiconductors and μ e for electrons of n‐type semiconductors), where e is the elementary charge …”

Section: Introductionmentioning

confidence: 99%

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Promising and Eco‐Friendly Cu₂X‐Based Thermoelectric Materials: Progress and Applications

et al. 2020

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Due to the nature of their liquid‐like behavior and high dimensionless figure of merit, Cu2X (X = Te, Se, and S)‐based thermoelectric materials have attracted extensive attention. The superionicity and Cu disorder at the high temperature can dramatically affect the electronic structure of Cu2X and in turn result in temperature‐dependent carrier‐transport properties. Here, the effective strategies in enhancing the thermoelectric performance of Cu2X‐based thermoelectric materials are summarized, in which the proper optimization of carrier concentration and minimization of the lattice thermal conductivity are the main focus. Then, the stabilities, mechanical properties, and module assembly of Cu2X‐based thermoelectric materials are investigated. Finally, the future directions for further improving the energy conversion efficiency of Cu2X‐based thermoelectric materials are highlighted.

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Section: Strategies For the Thermoelectric Property Enhancementmentioning

confidence: 99%

“…Small amount of Bi doping on Cu site can reduce n H . Meanwhile, further increasing Bi doping level can increase n H due to bond softening …”

Section: Strategies For the Thermoelectric Property Enhancementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Promising and Eco‐Friendly Cu₂X‐Based Thermoelectric Materials: Progress and Applications

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“…Capable of direct energy conversion between heat and electricity without environment pollution, thermoelectric materials are attracting wide research interests . The energy conversion efficiency of thermoelectric material is evaluated by the dimensionless figure of merit, zT = S 2 σT /κ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and κ is the total thermal conductivity . κ can be treated as the accumulation of lattice vibration (lattice thermal conductivity, κ l ) and electrical thermal conductivity (κ e ) .…”

Section: Comparison Of Zt (T = 300 K) Of Bi2te27se03 Films Preparedmentioning

confidence: 99%

Anisotropy Control–Induced Unique Anisotropic Thermoelectric Performance in the n‐Type Bi₂Te_2.7Se_0.3 Thin Films

et al. 2019

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Anisotropic Bi2Te3‐based thermoelectric materials have drawn extensive interest in the past decades. Here, n‐type Bi2Te2.7Se0.3 films with superhigh figure of merit are developed through anisotropy control via tuning an external electric field and deposition anisotropy. It is found that the angle of interplanar grain boundaries between (0 1 5) and (0 1 11) planes can be tuned by the applied external electric field, which leads to the strengthened anisotropy of electron mobility and simultaneously maintains low lattice thermal conductivity. Dominated by the unique change in the anisotropy of both lattice thermal conductivity and electron mobility, a record‐high zT value of ≈1.6 at room temperature can be achieved in the as‐deposited n‐type Bi2Te2.7Se0.3 film under 20 V external electric field. This work indicates that the electric field–induced deposition anisotropy control can be used to develop high‐performance Bi2Te3‐based thermoelectric films.

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“…[ 35–40 ] The performance of thermoelectric materials can be enhanced from the two aspects: 1) optimization of electrical transportation performance and 2) minimization of thermal transport properties. [ 41–48 ]…”

Section: Introductionmentioning

confidence: 99%

High‐Performance GeTe‐Based Thermoelectrics: from Materials to Devices

Liu

Wang

et al. 2020

Advanced Energy Materials

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m ), [52] enlarging band degeneracy (N V ), [43] and introducing resonant energy levels, [26] can also tune n p effectively. Taking Ge 1−x−y Sb x Zn y Te as an example, Zn doping can reduce the energy offset (ΔE) between L and Σ point. [52] The minimization of thermal transport properties is mainly achieved through suppressing the electrical property-independent κ l . [53][54][55][56][57] Thermoelectric materials with High-performance GeTe-based thermoelectrics have been recently attracting growing research interest. Here, an overview is presented of the structural and electronic band characteristics of GeTe. Intrinsically, compared to lowtemperature rhombohedral GeTe, the high-symmetry and high-temperature cubic GeTe has a low energy offset between L and Σ points of the valence band, the reduced direct bandgap and phonon group velocity, and as a result, high thermoelectric performance. Moreover, their thermoelectric performance can be effectively enhanced through either carrier concentration optimization, band structure engineering (bandgap reduction, band degeneracy, and resonant state engineering), or restrained lattice thermal conductivity (phonon velocity reduction or phonon scattering). Consequently, the dimensionless figure of merit, ZT values, of GeTe-based thermoelectric materials can be higher than 2. The mechanical and thermal stabilities of GeTe-based thermoelectrics are highlighted, and it is found that they are suitable for practical thermoelectric applications except for their high cost. Finally, it is recognized that the performance of GeTe-based materials can be further enhanced through synergistic effects. Additionally, proper material selection and module design can further boost the energy conversion efficiency of GeTe-based thermoelectrics.

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Realizing Bi-doped α-Cu2Se as a promising near-room-temperature thermoelectric material

Cited by 50 publications

References 58 publications

Promising and Eco‐Friendly Cu₂X‐Based Thermoelectric Materials: Progress and Applications

Promising and Eco‐Friendly Cu₂X‐Based Thermoelectric Materials: Progress and Applications

Anisotropy Control–Induced Unique Anisotropic Thermoelectric Performance in the n‐Type Bi₂Te_2.7Se_0.3 Thin Films

High‐Performance GeTe‐Based Thermoelectrics: from Materials to Devices

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Realizing Bi-doped α-Cu2Se as a promising near-room-temperature thermoelectric material

Cited by 50 publications

References 58 publications

Promising and Eco‐Friendly Cu2X‐Based Thermoelectric Materials: Progress and Applications

Promising and Eco‐Friendly Cu2X‐Based Thermoelectric Materials: Progress and Applications

Anisotropy Control–Induced Unique Anisotropic Thermoelectric Performance in the n‐Type Bi2Te2.7Se0.3 Thin Films

High‐Performance GeTe‐Based Thermoelectrics: from Materials to Devices

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Product

Resources

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Promising and Eco‐Friendly Cu₂X‐Based Thermoelectric Materials: Progress and Applications

Promising and Eco‐Friendly Cu₂X‐Based Thermoelectric Materials: Progress and Applications

Anisotropy Control–Induced Unique Anisotropic Thermoelectric Performance in the n‐Type Bi₂Te_2.7Se_0.3 Thin Films