Realizing forming-free characteristic by doping Ag into HfO<sub>2</sub>-based RRAM

Wu, Chang-Mou; Lin, Chun-Chu; Chen, Po-Hsun; Chang, Ting‐Chang; Zhou, Kuan‐Ju; Chen, Wen-Chung; Tan, Yung‐Fang; Yeh, Yu‐Hsuan; Chou, Sheng‐Yao; Huang, Hui‐Chun; Tsai, Tsung‐Ming; Sze, Simon M.

doi:10.35848/1882-0786/abec58

Cited by 11 publications

(10 citation statements)

References 31 publications

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“…Sokolov et al adjusted oxygen vacancy distribution in HfO 2 films by introducing the defects so that the oxidation pulse time is reduced. Moreover, the RRAM device with the Ag TE is mainly due to the strong electrochemical activity of Ag, which is easy to form metallic Ag CFs in the dielectric layer. , Therefore, for the prepared HfO 2 -based RRAM device, because of using Ag as the TE, it is possible that Ag CFs and oxygen vacancy CFs jointly play a role in the RS of the device. Then, we conducted a series of microscopic characterization experiments on various device films before and after electrical testing to confirm this theory.…”

Section: Resultsmentioning

confidence: 99%

“…Paul et al 45 reported that doping Al nanoparticles in HfO 2 helps improve the RS ratio, retention, and stability by adjusting the oxygen vacancies, but may slow down the speed of devices, which are best suitable for applications in neuromorphic synapses and multilevel devices. Interestingly, Wu et al 46 achieved forming-free characteristics and low switching currents by body doping Ag into HfO 2 . The body doping and uniformly distributed Ag nanoparticles in the resistive layer HfO 2 form tapered Ag CFs under the electric field, with an electric field enhancement effect at the tapered tips.…”

Section: Introductionmentioning

confidence: 99%

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HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Pan,

He,

Dan

et al. 2023

ACS Appl. Electron. Mater.

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Resistive random access memory (RRAM) has emerged as a memory technology due to its simple structure and compatibility with CMOS technology. In recent years, it was reported that HfO 2 -based RRAMs are promising for commercial applications but suffer from a relatively poor performance in stability and retention due to the random formation and breakage of the conductive channels. In this work, we introduced a layer of Ag nanoparticles embedded in the HfO 2 resistive switching layer to address the randomness in HfO 2 -based RRAMs. It was found that the embedding of Ag nanoparticles enhances the local electric field in HfO 2 , as a result of which conductive filaments in the RRAM will preferably grow where nanoparticles are located. By controlling the uniformity and distribution of Ag nanoparticles, the resistive switching uniformity is significantly improved. The relative fluctuation of V set is reduced from 13.85 to 6.96%, and the relative fluctuation of V reset is reduced from 23.01 to 14.45%. More importantly, we also achieved strong stability and a large resistive window with an on/off ratio of up to 10 2 . In the end, we proposed a resistive switching model to interpret the experimental observations.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Pan,

He,

Dan

et al. 2023

ACS Appl. Electron. Mater.

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“…By contrast, conductive filament formation is dominated by oxygen vacancies, and an appropriate amount of Ag can be used as conductive filaments to form contacts. [57][58][59] Consequently, RRAM devices can operate effectively under low-bias conditions. Ag concentration directly affects the electrical characteristics of RRAM devices.…”

Section: Resultsmentioning

confidence: 99%

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe₂O₃ Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

Hsu,

Huang,

Huang

et al. 2023

ECS J. Solid State Sci. Technol.

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We fabricated Fe2O3−x and Ag-doped Fe2O3−x devices with resistive switching behavior by using a radiofrequency cosputtering system. Our results indicated that doping Ag into Fe2O3−x can effectively improve device performance, increasing the data retention test time to beyond 104 s and resulting in switching cycles of approximately ∼3 × 102 times; resistance on/off ratios of approximately ∼103; and mean setting and reset voltages of 0.94 V and −1.35 V, respectively. The improvement in performance had several possible reasons. In our case, conductive filament formation was mainly induced by oxygen vacancies and Ag atoms. X-ray photoelectron spectroscopy showed that oxygen vacancies increased significantly with Ag doping. This phenomenon can improve device performance. Ag atoms served as trap centers, allowing for the easy trapping and release of charges. This effect facilitated the formation of conductive filaments. Ag-doped Fe2O3−x has significant potential for application in resistive switching random access memory devices.

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“…In this work, we propose a novel nitrogen-oxyanion-doping (N-doping) method to improve the forming performance of HfO2 RRAM. Different from previous doping methods, which use metallic element (Al [9], Mg [10], Ge [11], Ag [12]) dopants in the form of cations or non-metallic element (N [13], [14], F [15]) dopants in the form of anions, we use nitrogen oxyanions to dope HfO2 RRAM. Magnetron sputtering is used to induce N-doping, where the high-energy plasma atmosphere promotes the chemical reactions between N, O and Hf.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-Oxyanion-Doped HfO₂ Resistive Random-Access Memory With Chemically Enhanced Forming

Tang

et al. 2023

IEEE Electron Device Lett.

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The high forming voltage of resistive random-access memory (RRAM) is one of the key bottlenecks for its integration in advanced silicon technology nodes. Here a nitrogen-oxyanion-doped ( N-doped ) hafnium oxide (HfO2) RRAM with overall improvement on forming voltage, on/off ratio and endurance is demonstrated. The critical electric field of N-doped RRAM for forming is 40% less than that of undoped RRAM. Therefore, a thicker resistive switching layer (RSL) can be used to obtain the same forming voltage, which benefits the on/off ratio and endurance performance. The N-doped RRAM achieves 3× improvement in on/off ratio and 10× improvement in endurance at the forming voltage of 2 V, a value applicable for integration with advanced silicon technology node. We propose the hypothesis that the nitrites ((NO2) -) in the RSL of N-doped devices promote forming through introducing extra chemical process as well as additional conductive paths. Physical characterization and first-principles calculations are further carried out to validate our hypothesis.

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Realizing forming-free characteristic by doping Ag into HfO₂-based RRAM

Cited by 11 publications

References 31 publications

HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe₂O₃ Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

Nitrogen-Oxyanion-Doped HfO₂ Resistive Random-Access Memory With Chemically Enhanced Forming

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Realizing forming-free characteristic by doping Ag into HfO2-based RRAM

Cited by 11 publications

References 31 publications

HfO2-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

HfO2-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe2O3 Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory With Chemically Enhanced Forming

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Realizing forming-free characteristic by doping Ag into HfO₂-based RRAM

HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe₂O₃ Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

Nitrogen-Oxyanion-Doped HfO₂ Resistive Random-Access Memory With Chemically Enhanced Forming