Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging

Wang, Bingxiang; Jiang, Ke; Zhang, Shanli; Chen, Yuxuan; Fang, Tong; Xie, Zhiwei; Ben, Jianwei; Chen, Yang; Jia, Yuping; Liu, Mingrui; Sun, Xiaojuan; Li, Dabing

doi:10.1039/d3tc04301k

J. Mater. Chem. C

2024

DOI: 10.1039/d3tc04301k

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Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging

Bingxiang Wang,

Ke Jiang,

Shanli Zhang

et al.

Abstract: The ultraviolet (UV) detectors with high gain at low bias are urgently demanded. In this work, a GaN-based UV bipolar phototransistor (BPT) with a high zero-bias gain is obtained based...

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High Performance Self‐Powered p⁺‐GaN/n⁻‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

Wang,

Gao,

Han

et al. 2024

Advanced Optical Materials

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Heterojunction phototransistor (HPT) is considered the most promising detector technology in weak ultraviolet (UV) signal detection due to its inherent internal gain through transistor action. However, achieving high‐performance self‐powered UV HPTs remains a significant challenge. In this study, a high‐performance self‐powered p+‐GaN/n−‐ZnO/Au UV HPT with ZnO serving as the floating base is cleverly designed. The device features a unique back‐to‐back configuration of the p+‐GaN/n−‐ZnO heterojunction and n−‐ZnO/Au Schottky junction, along with an ultrathin ZnO base layer of a 3D nanowire network structure. This design enables the fabricated p+‐GaN/n−‐ZnO/Au UV HPT to operate in a self‐powered mode with exceptional performance metrics. Under zero bias, the device exhibits outstanding characteristics including ultralow dark current of 1.7 × 10−13 A, remarkable Iphoto/Idark ratio of 106, fast response speed (tr = 150 µs / tf = 250 µs), high responsivity of 9.74 A W−1, and detectivity of 1.58 × 1014 Jones, representing the best result achieved for UV HPTs thus far at zero bias. Moreover, the fabricated UV HPT is successfully demonstrated in solar‐blind imaging and UV communication systems without the need for an external power supply. This work presents effective and practical design strategies for achieving high‐performance self‐powered UV HPTs.

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High Performance Self‐Powered p⁺‐GaN/n⁻‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

Wang,

Gao,

Han

et al. 2024

Advanced Optical Materials

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Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering Strategy

Ma,

Shi,

Zang

et al. 2024

ACS Appl. Mater. Interfaces

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Asymmetric doping of wide-gap semiconductors has long been a major challenge, hindering their wider applications. Despite numerous attempts to address this issue through engineering doping levels, the results were still inconclusive. In this work, we propose a quantum engineering strategy based on the state-of-the-art spin-polarized HSE06 hybrid functional method. The local band offset between the host and quantum structures can considerably compensate for the large carrier activation energy (E a ). We chose the system of the AlN host embedded by GaN quantum dots as an example to validate the feasibility of this strategy. The E a of Si (n-type) and Be (p-type) dopants can be reduced from 222 and 404 meV to negative values and 2 meV, respectively. Therefore, electron and hole density can be increased to more than 10 19 and 10 20 cm −3 , respectively. We also tested potential dopants (C and Ge for the n-type, Mg and Ca for the p-type), and the technique is equally effective. This mechanism can also be used to understand the experimental observations of the superlattice doping strategy. Overall, our study demonstrates that the quantum engineering strategy provides a potential solution to overcome the asymmetric doping problem for universal wide-gap semiconductors and supports a feasible pathway for more efficient devices in the future.

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Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging

Abstract: The ultraviolet (UV) detectors with high gain at low bias are urgently demanded. In this work, a GaN-based UV bipolar phototransistor (BPT) with a high zero-bias gain is obtained based...

Cited by 2 publications

References 85 publications

High Performance Self‐Powered p⁺‐GaN/n⁻‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

High Performance Self‐Powered p⁺‐GaN/n⁻‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering Strategy

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Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging

Abstract: The ultraviolet (UV) detectors with high gain at low bias are urgently demanded. In this work, a GaN-based UV bipolar phototransistor (BPT) with a high zero-bias gain is obtained based...

Cited by 2 publications

References 85 publications

High Performance Self‐Powered p+‐GaN/n−‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

High Performance Self‐Powered p+‐GaN/n−‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering Strategy

Contact Info

Product

Resources

About

High Performance Self‐Powered p⁺‐GaN/n⁻‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

High Performance Self‐Powered p⁺‐GaN/n⁻‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication