As
a liquid-like material, CuAgSe has high carrier mobility and
ultralow lattice thermal conductivity. It undergoes an n–p
conduction-type transition during β- to α-phase transition
with increasing temperature. Moreover, optimization of the thermoelectric
performance of CuAgSe is rather difficult, owing to the two-carrier
conduction in this material. In this work, we reported the free tuning
of the conduction type and thermoelectric performance of CuAgSe by
manipulating the cation vacancies. Positron annihilation measurements
reveal that the increase in CuAg content can effectively suppress
the cation vacancies and reduce the hole carrier concentration, resulting
in n-type conduction at high temperatures. Doping with Zn at the Cu
sublattice in the CuAg-excessive CuAgSe can further decrease the number
of vacancies, leading to a significant decrease in hole carrier concentration.
Furthermore, the reduction of vacancies leads to weakening of carrier
scattering. As a result, carrier mobility is also enhanced, thus improving
the thermoelectric performance of n-type CuAgSe. On the other hand,
high-performance p-type CuAgSe can be achieved by decreasing the CuAg
content to introduce more cation vacancies. Ultimately, both n-type
and p-type CuAgSe with superb thermoelectric performance are obtained,
with a zT
max of 0.84 in Cu1.01Ag1.02Zn0.01Se (n-type) and 1.05 in (CuAg)0.96Se (p-type) at 600 K and average zT of
0.77 and 0.94 between 470 and 630 K for n-type and p-type, respectively.