Realizing improved performance of metal-insulator-semiconductor diodes with high-k MgO/SiOx stack

Silicon oxide (SiOx) coatings are attracting significant attention and are widely used in industrial applications. They can be prepared by plasma-assisted chemical vapor deposition (PACVD). PACVD at atmospheric pressure (AP-PACVD) is often employed to synthesize SiOx coatings, but it has generally not been scaled up to an industrially viable level. In the present work, a SiOx coating was continuously deposited onto a polyethylene terephthalate film using industrial-scale roll-to-roll type AP-PACVD. 1,1,3,3-Tetramethyldisiloxane (TMDSO) and tetraethoxysilane (TEOS) were selected as precursors. The elemental compositions and chemical structures of the SiOx coatings were characterized, and oxygen and water-vapor transmission rates were measured. The SiOx coating using TEOS exhibited better barrier properties than that using TMDSO, corresponding to the high oxygen content, high SiO2 content, and high siloxane network content in the SiOx coating.

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Realizing improved performance of metal-insulator-semiconductor diodes with high-k MgO/SiOx stack

Cited by 3 publications

References 43 publications

Spectroscopic analysis of defect-induced luminescent and dielectric properties of MgO-based composites on varying dopant concentration

Spectroscopic analysis of defect-induced luminescent and dielectric properties of MgO-based composites on varying dopant concentration

Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

Roll-to-Roll SiOx Synthesis on Polyethylene Terephthalate Film by Atmospheric-Pressure Plasma-Assisted Chemical Vapor Deposition

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