Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Lin, Yu Chuan; Jariwala, Bhakti; Bersch, Brian; Xu, Ke; Nie, Yifan; Wang, Baoming; Eichfeld, Sarah M.; Zhang, Xiaotian; Choudhury, Tanushree H.; Pan, Yi; Addou, Rafik; Smyth, Christopher M.; Li, Jun; Zhang, Kehao; Haque, Mahabul; Fölsch, Stefan; Feenstra, R. M.; Wallace, Robert M.; Cho, Kyeongjae; Fullerton‐Shirey, Susan K.; Redwing, Joan M.; Robinson, Joshua A.

doi:10.1021/acsnano.7b07059

Cited by 196 publications

(270 citation statements)

References 53 publications

(125 reference statements)

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“…[18] They are among the most abundant point defects in our samples but their density varies considerably between different CVD preparations. Similar STM contrast has been observed in CVD-grown MoS 2 [19], MOCVD-and MBE-grown WSe 2 [20,21], MBE-grown MoSe 2 [21] and natural bulk MoS 2 (0001) [22]. Some of these reports suggest that the observed defect might be charged [18,21,22] but their chemical origin remains unclear.…”

supporting

confidence: 68%

Resonant and bound states of charged defects in two-dimensional semiconductors

et al. 2020

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A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS2 using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS2, whereby localized states originating from the secondary valence band maximum at Γ hybridize with continuum states from the primary valence band maximum at K/K . Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.

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supporting

confidence: 68%

Resonant and bound states of charged defects in two-dimensional semiconductors

et al. 2020

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“…On the application side, scaling of micrometer-sized proof-of-principle devices to macroscopic dimensions remains a challenge. Wafer-scale synthesis of uniform TMD layers has been achieved [157,158], but the monolithic growth of VdW heterostructures is difficult.…”

Section: Challengesmentioning

confidence: 99%

Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

2018

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Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2 and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible spectral regimes, making them potentially interesting candidates for various applications in optics and optoelectronics. Here, we review their optical and optoelectronic properties with emphasis on exciton physics and devices. As excitons are tightly bound in these materials and dominate the optical response even at room-temperature, their properties are examined in depth in the first part of this article.We discuss the remarkably versatile excitonic landscape, including bright, dark, localized and interlayer excitons. In the second part, we provide an overview on the progress in optoelectronic device applications, such as electrically driven light emitters, photovoltaic solar cells, photodetectors and opto-valleytronic devices, again bearing in mind the prominent role of excitonic effects. We conclude with a brief discussion on challenges that remain to be addressed to exploit the full potential of transition metal dichalcogenide semiconductors in possible exciton-based applications.

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“…In addition, samples prepared by selective etching suffer from defects generated during the etching process and large thickness distributions (16,17). These types of 2D TMNs are not suitable for high performance electronic and optoelectronic device applications which often require 2D crystals with decent area (>10 micrometers of lateral size), quality, and deposition on solid state substrates (18,19). Conventional 2D materials such as graphene and transition metal dichalcogenides (TMDs) produced using chemical vapor deposition (CVD) have made significant progress in advancing the development of electronic devices (20)(21)(22).…”

Section: Introductionmentioning

confidence: 99%

Realization of 2D crystalline metal nitrides via selective atomic substitution

Cao

Gao

et al. 2020

Sci. Adv.

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Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are potentially promising for applications in electronic and optoelectronic devices; however, the synthesis of such TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo5N6 crystals with large area and high quality via in situ chemical conversion of layered MoS2 crystals. The structure and quality of the ultrathin Mo5N6 crystal are confirmed using transmission electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. The large lateral dimensions of Mo5N6 crystals are inherited from the MoS2 crystals that are used for the conversion. Atomic force microscopy characterization reveals the thickness of Mo5N6 crystals is reduced to about 1/3 of the MoS2 crystal. Electrical measurements show the obtained Mo5N6 samples are metallic with high electrical conductivity (~ 100 Ω sq -1 ), which is comparable to graphene. The versatility of this general approach is demonstrated by expanding the method to synthesize W5N6 and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next generation electronics.

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Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Cited by 196 publications

References 53 publications

Resonant and bound states of charged defects in two-dimensional semiconductors

Resonant and bound states of charged defects in two-dimensional semiconductors

Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

Realization of 2D crystalline metal nitrides via selective atomic substitution

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