2023
DOI: 10.1002/anie.202218386
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Realizing Textured Zinc Metal Anodes through Regulating Electrodeposition Current for Aqueous Zinc Batteries

Abstract: Crystallography modulation of zinc (Zn) metal anode is promising to promote Zn reversibility in aqueous electrolytes, but efficiently constructing Zn with specific crystallographic texture remains challenging. Herein, we report a current‐controlled electrodeposition strategy to texture the Zn electrodeposits in conventional aqueous electrolytes. Using the electrolytic cell with low‐cost Zn(CH3COO)2 electrolyte and Cu substrate as a model system, the texture of as‐deposited Zn gradually transforms from (101) to… Show more

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Cited by 136 publications
(92 citation statements)
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“…[ 55 ] Besides, some recent works discussed current density‐dependent texture development in Zn electrodeposits, whereas a comprehensive understanding of the fundamental mechanism is still missing. [ 19,24,56 ] Considering the HCP crystalline structure of Zn, the nucleus is assumed in uniform hexagonal platelet shape (Figure S8, Supporting information), and the varied Gibbs free energy (Δ G nucleation ) when forming a nucleus can be written as: ΔGnucleationbadbreak=33R2hρnF2Mηgoodbreak+6Rhσ1goodbreak+33R22(σ1badbreak+σ2goodbreak−σ3)\[\Delta {G_{{\rm{nucleation}}}} = - \frac{{3\sqrt 3 {R^2}h\rho nF}}{{2M}}\eta + 6Rh{\sigma _1} + \frac{{3\sqrt 3 {R^2}}}{2}\left( {{\sigma _1} + {\sigma _2} - {\sigma _3}} \right)\] where R is circumradius, h is the height of the platelet, ρ is density of Zn, n is the number of reaction electrons, F is Faraday's constant, η is overpotential, M is relative molecular mass of Zn, σ i ( i = 1, 2, 3) is interfacial energy between nuclei and solution, nuclei and substrate, solution and substrate, respectively. Then, the critical nucleus radius R c , calculated when ΔGR=0$\frac{{\partial \Delta G}}{{\partial R}} = 0$, is written as follows: Rcbadbreak=23hσ1hρnFMη(σ1+σ2σ3)goodbreak=23CAηB\[{R_{\rm{c}}} = \frac{{\frac{2}{{\sqrt 3 }}h{\sigma _1}}}{{\frac{{h\rho nF}}{M}\eta - \left( {{\sigma _1} + {\sigma _2} - {\sigma _3}} \right)}} = \frac{{\frac{2}{{\sqrt 3 }}C}}{{A\eta - B}}\] …”
Section: Resultsmentioning
confidence: 99%
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“…[ 55 ] Besides, some recent works discussed current density‐dependent texture development in Zn electrodeposits, whereas a comprehensive understanding of the fundamental mechanism is still missing. [ 19,24,56 ] Considering the HCP crystalline structure of Zn, the nucleus is assumed in uniform hexagonal platelet shape (Figure S8, Supporting information), and the varied Gibbs free energy (Δ G nucleation ) when forming a nucleus can be written as: ΔGnucleationbadbreak=33R2hρnF2Mηgoodbreak+6Rhσ1goodbreak+33R22(σ1badbreak+σ2goodbreak−σ3)\[\Delta {G_{{\rm{nucleation}}}} = - \frac{{3\sqrt 3 {R^2}h\rho nF}}{{2M}}\eta + 6Rh{\sigma _1} + \frac{{3\sqrt 3 {R^2}}}{2}\left( {{\sigma _1} + {\sigma _2} - {\sigma _3}} \right)\] where R is circumradius, h is the height of the platelet, ρ is density of Zn, n is the number of reaction electrons, F is Faraday's constant, η is overpotential, M is relative molecular mass of Zn, σ i ( i = 1, 2, 3) is interfacial energy between nuclei and solution, nuclei and substrate, solution and substrate, respectively. Then, the critical nucleus radius R c , calculated when ΔGR=0$\frac{{\partial \Delta G}}{{\partial R}} = 0$, is written as follows: Rcbadbreak=23hσ1hρnFMη(σ1+σ2σ3)goodbreak=23CAηB\[{R_{\rm{c}}} = \frac{{\frac{2}{{\sqrt 3 }}h{\sigma _1}}}{{\frac{{h\rho nF}}{M}\eta - \left( {{\sigma _1} + {\sigma _2} - {\sigma _3}} \right)}} = \frac{{\frac{2}{{\sqrt 3 }}C}}{{A\eta - B}}\] …”
Section: Resultsmentioning
confidence: 99%
“…d) 3D‐comparison of the plating–stripping performances (DOD, current density, and cumulative capacity) of our (002)‐Zn with some recent studies. [ 8,45,56,59–72 ] Respective details are listed in Table S1 (Supporting information) as well. e) XRD patterns of (002)‐Zn and Random‐Zn electrodes after specific plating–stripping cycles, and the corresponding SEM images of f–i) (002)‐Zn and j–m) Random‐Zn.…”
Section: Resultsmentioning
confidence: 99%
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