2021
DOI: 10.1021/acsaelm.1c00382
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Realizing the Conversion of Resistive Switching Behavior from Binary to Ternary by Adjusting the Charge Traps in the Polymers

Abstract: Functional polymer materials have shown great application potential in the field of information storage. Nevertheless, the majority of polymer-based memory devices are restricted to binary storage and exhibit limited capacity. In this study, naphthalene benzimidazole acceptor units were connected to fluorene/carbazole donor, and four new donor−acceptor bipolar-conjugated copolymers were achieved via the Suzuki cross-coupling reaction. Compared with pure fluorene/carbazole polymers, these polymers used in stora… Show more

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Cited by 9 publications
(9 citation statements)
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“…In this region, the current is approximately proportional to the square of the voltage ( I ∝ V 1.88 ), which corresponds to Child's law, known as the space charge limited current (SCLC) region. [ 46–48 ] With the continuous increase of the voltage, some conductive species appeared in the PCz‐BB:CdS layer, and accumulate from ITO to Al to form conductive filament. The conductive species may be generated by the vacancies formed by the escape of S 2– in CdS, and the mechanism diagram is shown in Figure 9b–f.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In this region, the current is approximately proportional to the square of the voltage ( I ∝ V 1.88 ), which corresponds to Child's law, known as the space charge limited current (SCLC) region. [ 46–48 ] With the continuous increase of the voltage, some conductive species appeared in the PCz‐BB:CdS layer, and accumulate from ITO to Al to form conductive filament. The conductive species may be generated by the vacancies formed by the escape of S 2– in CdS, and the mechanism diagram is shown in Figure 9b–f.…”
Section: Resultsmentioning
confidence: 99%
“…Once the voltage reaches V th2 and the conductive filament is successfully connected from the bottom electrode to the top electrode, the memory device switches to ON2 state, obeying Ohm's rule ( I ∝ V 1.15 ). [ 46–48 ] The device remains in ON2 state and the carriers are transported along the conductive path and the conductive filament. However, when a reverse voltage is applied, a large amount of Joule heat is generated to break the conductive filament, and the device switches from NO2 state to OFF state.…”
Section: Resultsmentioning
confidence: 99%
“…The spin coating speed was 20 s with 750 rpm and 30 s with 2900 rpm. Next, they were put in an oven (60 °C, 12 h) to dry them into films . The Al electrodes were plated on the surface of the active layer via vacuum vapor.…”
Section: Methodsmentioning
confidence: 99%
“…Next, they were put in an oven (60 °C, 12 h) to dry them into films. 21 The Al electrodes were plated on the surface of the active layer via vacuum vapor. Finally, the ITO/PIIO/Al and ITO/PIIO:WS 2 /Al devices were obtained.…”
Section: ■ Introductionmentioning
confidence: 99%
“…[14][15][16] Polymer memory materials can store data through the conversion between the low and high current states between two electrodes by the applied voltage, which can be assigned as "0" and "1" or "OFF" state and "ON" state. [17][18][19][20][21] In recent years, functional polyimides (PIs) are regarded as the most promising polymeric memory materials due to their excellent thermal resistance [22] , chemical stability [23] , mechanical durability [24] and flexibility [25] . More importantly, PIs with the special donor-acceptor (D-A) type molecular structures exhibiting stronger intramolecular and intermolecular charge transfer (CT) effects are more promising for the flexible memory devices.…”
Section: Introductionmentioning
confidence: 99%