For
dielectric energy storage films, high leakage current always
results in larger loss of energy, heating breakdown, and poor stability.
This work designs an interfacial charge barrier by combining with
Na0.5Bi3.25La1.25Ti4O15 and BaBi3.4La0.6Ti4O15 films with different conductivity and dielectric constant
to substantially improve the leakage characteristics, thereby obtaining
a breakdown electric field as high as 3683 kV/cm and superior energy
storage performances with an energy storage density of 106 J/cm–3 and an efficiency of 73.6%. Meanwhile, excellent
frequency, temperature, and fatigue for stable operating states are
achieved in the composite films. The interfacial charge barrier plays
a key role in limiting the leakage and enhancing the breakdown field
due to the scattering or absorption for the space charges. The electric-field
and electric-current density distribution simulated by the finite
element analysis shows that the interfacial charge barrier impedes
the flow of leakage current and raises the breakdown electric field.
This work provides a leakage-limitation engineering for designing
high-performance film dielectric capacitor devices.