2020
DOI: 10.1016/j.jssc.2020.121592
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Realizing white emission in Sc2(MoO4)3:Eu3+/Dy3+/Ce3+ phosphors through computation and experiment

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Cited by 13 publications
(5 citation statements)
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“…The doping of RE 3+ ions will affect both conduction band and valence band. And the effect on the valence band is more obvious The valence band rises while the conduction band falls, resulting in a decrease in the band gap, which consistent with the literature reported previously [33]. The reduction of the band gap helps the transition of electrons to improve the fluorescence performance.…”
Section: Electronic Structuressupporting
confidence: 90%
“…The doping of RE 3+ ions will affect both conduction band and valence band. And the effect on the valence band is more obvious The valence band rises while the conduction band falls, resulting in a decrease in the band gap, which consistent with the literature reported previously [33]. The reduction of the band gap helps the transition of electrons to improve the fluorescence performance.…”
Section: Electronic Structuressupporting
confidence: 90%
“…Figure 3A shows the PLE and PL spectra of K 3 GdSi 2 O 7 : 0.02Ce 3+ . In the excitation spectrum by monitoring the 510 nm emission, there are two excitation bands peaked at 329 and 387 nm, which can be ascribed to the 4f → 5d 2 and 4f → 5d 1 transitions of Ce 3+ , respectively 14,19 . At irradiation by 365 nm, the PL spectrum is made up of a broad emission band ranging from 400 to 650 nm with a maximum of 515 nm.…”
Section: Resultsmentioning
confidence: 99%
“…In the excitation spectrum by monitoring the 510 nm emission, there are two excitation bands peaked at 329 and 387 nm, which can be ascribed to the 4f → 5d 2 and 4f → 5d 1 transitions of Ce 3+ , respectively. 14,19 At irradiation by 365 nm, the PL spectrum is made up of a broad emission band ranging from 400 to 650 nm with a maximum of 515 nm. Figure 3B,C demonstrates that the replacement of K + by Rb + ions can cause the phenomena with the spectral shift.…”
Section: Resultsmentioning
confidence: 99%
“…The calculated band structure and densities of states (DOS) verified that the SMO host is a wide‐band semiconductor with an indirect band gap of 3.68 eV, which agrees with past reports (Figure S12, Supporting Information). [ 23 ] The SMO conduction band bottom (CBB) is a mixture of Mo‐ d and O‐ p orbitals, whereas its valence band top (VBT) is predominantly of O‐ p orbitals. The same statement can also be applied to the doped SMOE and SMOT samples.…”
Section: Resultsmentioning
confidence: 99%