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Polymer matrix composite memristors exhibit exceptional performances, including a straightforward structure, rapid operational speed, high density, good scalability, cost-effectiveness, and superior mechanical flexibility for wearable applications. This study utilizes sensitized chemical evaporation and spin coating carbonization techniques to fabricate composite nanofibers doped with Nickel-Cobalt coated multi-walled carbon nanotubes (SC-NCMTs). A novel polyimide matrix composite memory device was fabricated using in-situ polymerization technology. The transmission electron microscopy (TEM) and micro-Raman spectroscopy analyses validate the presence of dual interfaces structure locating between the Ni-Co-MWNTs, carbon nanofibers and PI matrix and a large number of defects in the SC-NCMTs/PI composite films, resulting in tunable ternary resistive switching behaviors of the composite memory device, exhibiting good ON/OFF current ratio of 104 and a retention time of 2500 s under operating voltages Vonset ≤ 3 V. Based on the interface layer distribution and the defects in the composites, different physical models are comprised to investigate the charge transmission mechanism underlying the multilevel resistive switching behaviors. The studies on the impact of tunable multi-interfaces trap structures on multilevel resistive switching could enhance the data storage capabilities of polymer matrix memristors.
Polymer matrix composite memristors exhibit exceptional performances, including a straightforward structure, rapid operational speed, high density, good scalability, cost-effectiveness, and superior mechanical flexibility for wearable applications. This study utilizes sensitized chemical evaporation and spin coating carbonization techniques to fabricate composite nanofibers doped with Nickel-Cobalt coated multi-walled carbon nanotubes (SC-NCMTs). A novel polyimide matrix composite memory device was fabricated using in-situ polymerization technology. The transmission electron microscopy (TEM) and micro-Raman spectroscopy analyses validate the presence of dual interfaces structure locating between the Ni-Co-MWNTs, carbon nanofibers and PI matrix and a large number of defects in the SC-NCMTs/PI composite films, resulting in tunable ternary resistive switching behaviors of the composite memory device, exhibiting good ON/OFF current ratio of 104 and a retention time of 2500 s under operating voltages Vonset ≤ 3 V. Based on the interface layer distribution and the defects in the composites, different physical models are comprised to investigate the charge transmission mechanism underlying the multilevel resistive switching behaviors. The studies on the impact of tunable multi-interfaces trap structures on multilevel resistive switching could enhance the data storage capabilities of polymer matrix memristors.
In the dynamic fields of information science and electronic technology, there is a notable trend towards leveraging carbon materials, favored for their ease of synthesis, biocompatibility, and abundance. This trend is particularly evident in the development of memristors, benefiting from the unique electronic properties of carbon to enhance device performance. This study utilizes sensitized chemical evaporation and spin-coating carbonization techniques to fabricate nickel-cobalt coated carbon composite nanofibers (SC-NCMNTs). Novel polyimide (PI) matrix composite memory devices were fabricated using in situ polymerization technology. Transmission electron microscopy (TEM) and micro-Raman spectroscopy analyses validated the presence of dual interface structures located between the Ni-Co-MWNTs, carbon composite nanofibers, and PI matrix, revealing a significant number of defects within the SC-NCMNTs/PI composite films. Consequently, this results in a tunable charge trap-based ternary resistive switching behavior of the composite memory devices, exhibiting a high ON/OFF current ratio of 104 and a retention time of 2500 s at an operating voltage of less than 3 V. The mechanism of resistive switching is thoroughly elucidated through a comprehensive charge transport model, incorporating molecular orbital energy levels. This study provides valuable insights for the rational design and fabrication of efficient memristors characterized by multilevel resistive switching states.
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