Recent advancements in implantable neural links based on organic synaptic transistors

Biswas, Swarup; Jang, Hyo‐won; Lee, Yongju; Choi, Hyojeong; Kim, Yoon; Kim, Hyeok; Zhu, Yangzhi

doi:10.1002/exp.20220150

Cited by 3 publications

(1 citation statement)

References 135 publications

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“…These charged particles will pass through the PN junction of the transistor, generating charges that are collected by the electrodes, causing logic cell upsets, functional interrupts, or burnout during device application in space. Diverse semiconductor materials can be made into different types and structures of transistors, which can be used in various fields such as biomedicine and aerospace fields [1]. Static random-access memory (SRAM)-based field programmable gate array (FPGA) offers comprehensive functions to address the requirements across a wide set of space applications.…”

Section: Introductionmentioning

confidence: 99%

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Tian,

Cao,

Liu

et al. 2024

Electronics

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As the feature size of integrated circuit decreases, the critical charge of single-event effect decreases as well, making nano-scale devices more susceptible to the high-energy charged particles during their application in space. Here, we study the electron-induced single-event effect in 28 nm static random-access memory (SRAM)-based field programmable gate array (FPGA) utilizing high-energy electrons with energy of 1 MeV~5 MeV. The experimental results demonstrate that the 3 MeV electrons can cause single-event functional interrupts (SEFIs) in FPGA, while the electrons with other energies cannot. To further explore the mechanism of electron-induced SEFIs in this nanoscale FPGA, we combined Monte Carlo, Technology Computer-Aided Design (TCAD), and Simulation Program with Integrated Circuit Emphasis (SPICE) simulations. It is revealed that the SEFI was mainly caused by the direct ionization effect of high-energy electrons, and the SEFI was related to the interactions between multiple sensitive nodes.

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Section: Introductionmentioning

confidence: 99%

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Tian,

Cao,

Liu

et al. 2024

Electronics

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Far-gate synaptic transistors utilizing ion-charge dual-transfer mechanism for neurotransmitter-multiplexing temporal coding

Li,

Feng,

Shi

et al. 2024

Applied Physics Letters

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The ability of artificial synapses to replicate multiplexed-transmission is a significant advancement in emulating complex brain activities. However, it generally required more stringent material requirements of intrinsic-ambipolarity and more complex structures of P/N dual-channel. Here, we proposed a far-gate synaptic transistor (FGST) just using a single-channel composed of a common unipolar semiconductor to emulate the cooperation and competition between two excitatory neurotransmitters. FGST exhibits a unique ion-charge dual-transfer mechanism, enabling distinct behavioral regulation modes with switchable synaptic plasticity: ion-dominant potentiation-depression with short-term plasticity and hole-dominant potentiation with enhanced memory. Moreover, FGST with dual-excitatory enhancement can be used for temporal contrast encoding, dividing currents into multiple memory states based on a fixed threshold; by comparing the variations in postsynaptic currents with different thresholds, it offers a method for further expanding the number of temporal states in the device. This work is a step toward constructing multifunctional artificial intelligent systems.

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Flexible optoelectronic N-I-P synaptic device with visible spectrum perception for energy-efficient artificial vision and efferent neuromuscular system

Wei,

Fu,

Yang

et al. 2024

Applied Physics Letters

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We have designed a flexible photoelectric artificial synapse with an oxide/mixed perovskite/polymer N-I-P structure that exhibits essential synaptic plasticity. Formamidinium lead triiodide FAPbI3 perovskite doped with bromine and methylammonium (FAxMA1−xPbI2Br) is employed as the intrinsic layer to improve the optical properties of devices. Without requiring a power source in reaction to outside optical spikes, multiple pulse-dependent plasticity is reproduced on the synaptic devices, and the image's edges are sharpened using high-pass filtering. Additionally, the classical conditioning and spatiotemporal learning are copied under the electric pulse excitation. Significant negative differential resistance is evident, even after 1500 flex/flat mechanical operation. The recognition rate of letters in the visual system is as high as 92%, and the walking distance in the efferent neuromuscular system is controllable. The flexible optoelectronic N-I-P synaptic device is designed to facilitate energy-efficient information processing for neuromorphic computing.

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Recent advancements in implantable neural links based on organic synaptic transistors

Cited by 3 publications

References 135 publications

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Far-gate synaptic transistors utilizing ion-charge dual-transfer mechanism for neurotransmitter-multiplexing temporal coding

Flexible optoelectronic N-I-P synaptic device with visible spectrum perception for energy-efficient artificial vision and efferent neuromuscular system

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